Triode/MOS tube/transistor/module
Samwin (Semipower)
Producenci
DIODES (US and Taiwan)
Producenci
VISHAY (Vishay)
Producenci
N-channel, 100V, 32A, 0.011Ω@10V
Opis
SILAN (Silan Micro)
Producenci
HUASHUO (Huashuo)
Producenci
AGM-Semi (core control source)
Producenci
Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 46A Power (Pd): 28W On-Resistance (RDS(on)@Vgs,Id): 4.4mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate Charge (Qg@Vgs): 13.5nC@10V Input Capacitance (Ciss@Vds): 0.842nF@20V , Vds=40V Id=46A Rds=4.4mΩ, Working temperature: -55℃~+150℃@(Tj) DFN3*3encapsulation;
Opis
SILAN (Silan Micro)
Producenci
VBsemi (Wei Bi)
Producenci
ISC (Wuxi Solid Electric)
Producenci
VBsemi (Wei Bi)
Producenci
VBsemi (Wei Bi)
Producenci
APM (Jonway Microelectronics)
Producenci
LGE (Lu Guang)
Producenci
SPTECH (Shenzhen Quality Super)
Producenci
NPN 115W 60V 10A Applications: Designed as a high quality amplifier that works up to 60 watts into a 4 ohm load.
Opis
SPTECH (Shenzhen Quality Super)
Producenci
NPN 115W 60V 10A Applications: Designed as a high quality amplifier that works up to 60 watts into a 4 ohm load.
Opis
WINSOK (Weishuo)
Producenci
Configuration N+P Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -5.2 VGS(th)(v) -1.5 RDS(ON)(m?)@4.345V 81 Qg( nC)@4.5V 6.4 QgS(nC) 2.1 Qgd(nC) 2.5 Ciss(pF) 650 Coss(pF) 68 Crss(pF) 55
Opis
SHIKUES (Shike)
Producenci
onsemi (Ansemi)
Producenci
This high voltage NPN bipolar transistor is a spin-off of our popular SOT-23 3-lead device. The device is suitable for general switching applications and comes in a SOT-723 surface mount encapsulation. The device is suitable for low power surface mount applications where board space is at a premium.
Opis