Triode/MOS tube/transistor/module
NCE (Wuxi New Clean Energy)
Producenci
P-channel, -30V, -25A, 9mΩ@-10V
Opis
JSMSEMI (Jiesheng Micro)
Producenci
Littelfuse (American Littelfuse)
Producenci
SPTECH (Shenzhen Quality Super)
Producenci
SHIKUES (Shike)
Producenci
PNP, Vceo=-30V, Ic=-800mA, hfe=150~300
Opis
Convert Semiconductor
Producenci
CBI (Creation Foundation)
Producenci
SILAN (Silan Micro)
Producenci
VBsemi (Wei Bi)
Producenci
XDM (Xin Da Mao)
Producenci
WILLSEMI (Will)
Producenci
HXY MOSFET (Huaxuanyang Electronics)
Producenci
Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 25V Collector current (Ic): 1.5A Power (Pd): 500mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@800mA, 80mA DC current gain (hFE@Ic,Vce): 400@100mA, 1V Characteristic frequency (fT): 100MHz
Opis
Drain-source voltage (Vdss): 650V Continuous drain current (Id): 38A MOS tube
Opis
N-channel, 600V, 12A, 600mΩ@10V
Opis
Convert Semiconductor
Producenci