Triode/MOS tube/transistor/module
BORN (Born Semiconductor)
Producenci
N-Channel Enhancement Mode Field Effect Transistor
Opis
Tokmas (Tokmas)
Producenci
MSKSEMI (Mesenco)
Producenci
Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 60A On-Resistance (RDS(on)@Vgs,Id): 6mΩ@10V 9Ω@4.5V, Threshold Voltage (Vgs(th )@Id): 1.2V@250uA
Opis
N-channel, 600V, 4A, 2.5Ω@10V
Opis
NCE (Wuxi New Clean Energy)
Producenci
MATSUKI (pine wood)
Producenci
P-channel, low-voltage MOSFETs
Opis
onsemi (Ansemi)
Producenci
Automotive power MOSFETs capable of withstanding high energy in avalanche and commutation modes. Suitable for low voltage high speed switching applications in power supplies, converters and power motor control. These devices are especially useful in bridge circuits where diode speed and commutation safe operating regions are critical, providing additional safety margin against unintended transient voltages. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.
Opis
TECH PUBLIC (Taizhou)
Producenci
ElecSuper (Jingxin Micro)
Producenci
ST (STMicroelectronics)
Producenci
BLUE ROCKET (blue arrow)
Producenci
SHIKUES (Shike)
Producenci
onsemi (Ansemi)
Producenci
This P-channel logic level MOSFET is produced using the advanced PowerTrench process, which is specially adapted to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low in-line power loss in a very small surface-mount enclosure.
Opis
ST (STMicroelectronics)
Producenci
onsemi (Ansemi)
Producenci
Voltage VDSS600V, conduction resistance Rds5 ohms, charge Qg13nC, current ID2A
Opis
HUASHUO (Huashuo)
Producenci
JSMSEMI (Jiesheng Micro)
Producenci