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IXFR38N80Q2
Product Overview
- Category: Power MOSFET
- Use: Power switching applications
- Characteristics: High voltage, high current capability
- Package: TO-220, TO-247
- Essence: Efficient power management
- Packaging/Quantity: Bulk packaging, quantities vary
Specifications
- Voltage Rating: 800V
- Current Rating: 38A
- RDS(ON): 80mΩ
- Gate Threshold Voltage: 2V
- Operating Temperature: -55°C to 150°C
Detailed Pin Configuration
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
Functional Features
- Low on-state resistance
- Fast switching speed
- Low gate charge
- Avalanche energy specified
- Improved dv/dt capability
Advantages and Disadvantages
Advantages
- High voltage capability
- Low conduction losses
- Enhanced thermal performance
- Reliable operation in harsh environments
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to electrostatic discharge (ESD)
Working Principles
The IXFR38N80Q2 operates based on the principle of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of a channel. When a sufficient voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IXFR38N80Q2 is suitable for various power switching applications, including: - Switched-mode power supplies - Motor control - Inverters - Industrial equipment - Renewable energy systems
Detailed and Complete Alternative Models
- IXFR40N60Q
- IXFR35N60Q
- IXFR30N50Q
This completes the entry for IXFR38N80Q2, providing comprehensive information about its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
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Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem IXFR38N80Q2 w rozwiązaniach technicznych
What is IXFR38N80Q2?
- IXFR38N80Q2 is a specific model of power MOSFET, commonly used in electronic circuits and power applications.
What are the key specifications of IXFR38N80Q2?
- The key specifications of IXFR38N80Q2 include a drain-source voltage of 800V, a continuous drain current of 38A, and a low on-resistance.
In what technical solutions can IXFR38N80Q2 be used?
- IXFR38N80Q2 can be used in various technical solutions such as power supplies, motor control, inverters, and welding equipment.
What are the advantages of using IXFR38N80Q2 in technical solutions?
- The advantages of using IXFR38N80Q2 include high voltage capability, low on-resistance, and high switching speed, making it suitable for high-power applications.
How does IXFR38N80Q2 compare to other MOSFETs in its class?
- Compared to other MOSFETs, IXFR38N80Q2 offers a balance of high voltage handling and low on-resistance, making it suitable for a wide range of applications.
What are the typical operating conditions for IXFR38N80Q2?
- The typical operating conditions for IXFR38N80Q2 include a maximum junction temperature of 150°C and a storage temperature range of -55°C to 150°C.
Are there any application notes or reference designs available for using IXFR38N80Q2?
- Yes, there are application notes and reference designs available from the manufacturer that provide guidance on using IXFR38N80Q2 in various technical solutions.
Can IXFR38N80Q2 be used in parallel to increase current handling capacity?
- Yes, IXFR38N80Q2 can be used in parallel to increase current handling capacity in high-power applications.
What are the recommended thermal management techniques for IXFR38N80Q2?
- Recommended thermal management techniques for IXFR38N80Q2 include proper heatsinking and thermal vias to dissipate heat effectively.
Where can I purchase IXFR38N80Q2 for my technical project?
- IXFR38N80Q2 can be purchased from authorized distributors or directly from the manufacturer's website. It's important to ensure that the components are sourced from reliable suppliers to guarantee authenticity and quality.