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IRFB59N10DPBF
Product Overview
Category
The IRFB59N10DPBF belongs to the category of power MOSFETs.
Use
It is commonly used as a switching device in power supplies, motor control, and other high-current applications.
Characteristics
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power
- High input impedance
Package
The IRFB59N10DPBF is typically available in a TO-220AB package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 59A
- RDS(ON) (Max) @ VGS = 10V: 0.022Ω
- Gate-Source Voltage (VGS) ±20V
- Power Dissipation (PD): 200W
Detailed Pin Configuration
The IRFB59N10DPBF features a standard three-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low conduction losses
- Enhanced thermal performance
- High input impedance for easy drive circuit design
- Robust avalanche energy handling capability
Advantages
- High current-handling capacity
- Low on-state resistance reduces power dissipation
- Fast switching speed minimizes switching losses
- Suitable for high-frequency applications
- Enhanced thermal characteristics
Disadvantages
- Higher cost compared to traditional bipolar junction transistors (BJTs)
- Sensitivity to electrostatic discharge (ESD) requires careful handling during assembly
Working Principles
The IRFB59N10DPBF operates based on the principles of field-effect transistors, utilizing an electric field to control the conductivity of the channel between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is widely used in: - Switched-mode power supplies - Motor control circuits - Class-D audio amplifiers - DC-DC converters - Inverters for solar and automotive applications
Detailed and Complete Alternative Models
Some alternative models to the IRFB59N10DPBF include: - IRFB52N15DPBF - IRFB7434PBF - IRFB4110PBF - IRFB4227PBF
In conclusion, the IRFB59N10DPBF power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it a popular choice among electronic designers and engineers.
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Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem IRFB59N10DPBF w rozwiązaniach technicznych
What is the maximum drain-source voltage of IRFB59N10DPBF?
- The maximum drain-source voltage of IRFB59N10DPBF is 100V.
What is the continuous drain current rating of IRFB59N10DPBF?
- The continuous drain current rating of IRFB59N10DPBF is 59A.
What is the on-state resistance (RDS(on)) of IRFB59N10DPBF?
- The on-state resistance (RDS(on)) of IRFB59N10DPBF is typically 0.022 ohms.
What is the gate threshold voltage of IRFB59N10DPBF?
- The gate threshold voltage of IRFB59N10DPBF typically ranges from 2V to 4V.
Can IRFB59N10DPBF be used in high-frequency switching applications?
- Yes, IRFB59N10DPBF can be used in high-frequency switching applications due to its fast switching characteristics.
Is IRFB59N10DPBF suitable for automotive applications?
- Yes, IRFB59N10DPBF is suitable for automotive applications as it meets automotive quality and reliability standards.
What is the operating temperature range of IRFB59N10DPBF?
- The operating temperature range of IRFB59N10DPBF is typically -55°C to 175°C.
Does IRFB59N10DPBF have built-in protection features?
- IRFB59N10DPBF does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What are the typical applications of IRFB59N10DPBF?
- Typical applications of IRFB59N10DPBF include motor control, power supplies, DC-DC converters, and inverters.
Is IRFB59N10DPBF RoHS compliant?
- Yes, IRFB59N10DPBF is RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive for environmental safety.