Dyskretne produkty półprzewodnikowe - Tranzystory - IGBT - Moduły
Microsemi Corporation
Producenci
IGBT 600V 860A 2800W D4
Opis
Microsemi Corporation
Producenci
IGBT 1200V 100A 500W SP1
Opis
Microsemi Corporation
Producenci
IGBT 600V 100A 355W D1
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT BOOST CHOP SP4
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT ASYM BRIDGE SP4
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT BUCK CHOP SP4
Opis
Microsemi Corporation
Producenci
POWER MODULE IGBT 1200V 75A SP4
Opis
Microsemi Corporation
Producenci
IGBT 600V 100A 355W D1
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT PHASE LEG D1
Opis
Microsemi Corporation
Producenci
POWER MOD IGBT NPT PHASE LEG SP1
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT PHASE LEG SP4
Opis
Microsemi Corporation
Producenci
IGBT 600V 130A 445W D1
Opis
Microsemi Corporation
Producenci
IGBT 600V 110A 416W SP1
Opis
Microsemi Corporation
Producenci
IGBT 600V 110A 416W SP4
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT ASYM BRIDGE SP4
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT DUAL SOURCE SP4
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT FULL BRIDGE SP4
Opis
Microsemi Corporation
Producenci
IGBT 600V 130A 445W D1
Opis
Microsemi Corporation
Producenci
IGBT 600V 110A 416W SP1
Opis
Microsemi Corporation
Producenci
IGBT 600V 110A 416W SP4
Opis