Dyskretne produkty półprzewodnikowe - Tranzystory - IGBT - Moduły
Microsemi Corporation
Producenci
IGBT MODULE NPT PHASE LEG D3
Opis
Microsemi Corporation
Producenci
POWER MOD IGBT NPT PHASE LEG SP6
Opis
Microsemi Corporation
Producenci
IGBT 1200V 420A 2100W D3
Opis
Microsemi Corporation
Producenci
IGBT NPT BOOST CHOP 1200V 400A S
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT DUAL SP6
Opis
Microsemi Corporation
Producenci
IGBT 1200V 420A 2100W D3
Opis
Microsemi Corporation
Producenci
IGBT 1200V 400A 1780W SP6
Opis
Microsemi Corporation
Producenci
IGBT 1200V 400A 1780W SP6
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT PHASE LEG SP1
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT FULL BRIDGE SP1
Opis
Microsemi Corporation
Producenci
POWER MOD IGBT NPT FULL BRDG SP3
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT 2PH BRIDGE SP3
Opis
Microsemi Corporation
Producenci
IGBT NPT PHASE 600V 520A D3
Opis
Microsemi Corporation
Producenci
IGBT 600V 460A 1400W D3
Opis
Microsemi Corporation
Producenci
IGBT 600V 460A 1400W D3
Opis
Microsemi Corporation
Producenci
IGBT 600V 430A 1562W SP6
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT DUAL SP6
Opis
Microsemi Corporation
Producenci
IGBT 600V 430A 1562W SP6
Opis
Microsemi Corporation
Producenci
IGBT 600V 450A 1560W D4
Opis
Microsemi Corporation
Producenci
IGBT 1200V 510A 2500W D4
Opis