Dyskretne produkty półprzewodnikowe - Tranzystory - IGBT - Moduły
Microsemi Corporation
Producenci
IGBT MODULE NPT PHASE LEG SP4
Opis
Microsemi Corporation
Producenci
IGBT 600V 130A 445W D1
Opis
Microsemi Corporation
Producenci
IGBT 600V 110A 416W SP1
Opis
Microsemi Corporation
Producenci
IGBT 600V 110A 416W SP4
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT ASYM BRIDGE SP4
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT DUAL SOURCE SP4
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT FULL BRIDGE SP4
Opis
Microsemi Corporation
Producenci
IGBT 600V 130A 445W D1
Opis
Microsemi Corporation
Producenci
IGBT 600V 110A 416W SP1
Opis
Microsemi Corporation
Producenci
IGBT 600V 110A 416W SP4
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT TRPL PHASE SP6P
Opis
Microsemi Corporation
Producenci
IGBT MODULE NPT TRPLE DUAL SP6P
Opis
Microsemi Corporation
Producenci
IGBT 1200V 420A 1500W D3
Opis
Microsemi Corporation
Producenci
IGBT 1200V 420A 1500W D3
Opis
Microsemi Corporation
Producenci
IGBT MODULE TRENCH PHASE LEG D1
Opis
Microsemi Corporation
Producenci
IGBT MODULE TRENCH PHASE LEG D1
Opis
Microsemi Corporation
Producenci
IGBT MODULE TRENCH PH LEG SP4
Opis
Microsemi Corporation
Producenci
IGBT 1200V 150A 520W D1
Opis
Microsemi Corporation
Producenci
IGBT 1200V 140A 480W SP4
Opis
Microsemi Corporation
Producenci
IGBT 1700V 200A 695W D1
Opis