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NCP5106BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCP5106BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Numer części
NCP5106BDR2G
Kategoria
Power Chip > Gate Driver IC
Producent/marka
onsemi (Ansemi)
Kapsułkowanie
SOIC-8-150mil
Uszczelka
taping
Liczba opakowań
2500
Opis
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
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W magazynie 75348 PCS
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Słowa kluczowe NCP5106BDR2G
NCP5106BDR2G Części elektroniczne
NCP5106BDR2G Obroty
NCP5106BDR2G Dostawca
NCP5106BDR2G Dystrybutor
NCP5106BDR2G Tabela danych
NCP5106BDR2G Zdjęcia
NCP5106BDR2G Cena
NCP5106BDR2G Oferta
NCP5106BDR2G Najniższa cena
NCP5106BDR2G Szukaj
NCP5106BDR2G Nabywczy
NCP5106BDR2G Chip