W29GL128CH9T

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and durable format
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Manufacturer: Winbond Electronics Corporation
• Memory Type: NOR Flash
• Density: 128 Megabits (16 Megabytes)
• Organization: 16M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 90 ns (Max)
• Erase/Program Suspend/Erase Suspend: Yes
• Package Type: TSOP-48

Detailed Pin Configuration

The W29GL128CH9T features a TSOP-48 package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. CE#
18. WE#
19. OE#
20. BYTE#
21. VCC
22. DQ0
23. DQ1
24. DQ2
25. DQ3
26. DQ4
27. DQ5
28. DQ6
29. DQ7
30. RY/BY#
31. VSS
32. RP#
33. RE#
34. WP#
35. RESET#
36. ALE
37. CLE
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed read and write operations enable fast data access.
• Non-volatile memory retains data even when power is disconnected.
• Erase and program operations can be suspended, allowing flexibility in data management.
• Low power consumption makes it suitable for battery-powered devices.
• Wide operating temperature range ensures reliability in various environments.

Advantages and Disadvantages

Advantages: - Large storage capacity - High-speed data access - Low power consumption - Flexible erase and program operations

Disadvantages: - Limited endurance (number of erase/write cycles) - Higher cost compared to other memory technologies

Working Principles

The W29GL128CH9T utilizes NOR flash memory technology. It stores digital information by trapping electrons in a floating gate within each memory cell. The presence or absence of trapped electrons determines the stored data. When reading data, the memory controller applies appropriate voltages to the memory cells and measures the resulting current flow to determine the stored value. During programming or erasing, high voltages are applied to modify the electron charge in the floating gate.

Detailed Application Field Plans

The W29GL128CH9T is commonly used in various electronic devices that require non-volatile data storage, such as:

1. Embedded systems
2. Automotive electronics
3. Consumer electronics
4. Industrial control systems
5. Networking equipment

Its large storage capacity, high-speed operation, and low power consumption make it suitable for applications where reliable and efficient data storage is essential.

Detailed and Complete Alternative Models

1. W29GL064CH9T - 64 Megabit (8 Megabyte) density
2. W29GL256CH9T - 256 Megabit (32 Megabyte) density
3. W29GL512CH9T - 512 Megabit (64 Megabyte) density
4. W29GL01GCH9T - 1 Gigabit (128 Megabyte) density

These alternative models offer different storage capacities to cater to various application requirements while maintaining similar characteristics and functionality.

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