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SIHG11N80E-GE3
Product Overview
Category
The SIHG11N80E-GE3 belongs to the category of power MOSFETs.
Use
It is used for high-voltage, high-speed power switching applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SIHG11N80E-GE3 is typically available in a TO-220AB package.
Essence
This product is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is commonly packaged in reels or tubes and is available in varying quantities depending on the supplier.
Specifications
- Drain-Source Voltage (VDS): 800V
- Continuous Drain Current (ID): 11A
- On-Resistance (RDS(on)): 0.52Ω
- Gate Threshold Voltage (VGS(th)): 2.5V
- Total Gate Charge (Qg): 18nC
- Diode Forward Current: 11A
Detailed Pin Configuration
The SIHG11N80E-GE3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid power control.
Advantages
- Suitable for high-voltage applications
- Low on-resistance leads to reduced power dissipation
- Fast switching speed enhances overall system performance
Disadvantages
- May require additional circuitry for driving the gate due to high gate threshold voltage
- Higher gate charge compared to some alternative models
Working Principles
The SIHG11N80E-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.
Detailed Application Field Plans
The SIHG11N80E-GE3 is commonly used in: - Switching power supplies - Motor control systems - Inverters - Industrial equipment
Detailed and Complete Alternative Models
Some alternative models to the SIHG11N80E-GE3 include: - IRF840 - STP16NF06L - FQP27P06
In conclusion, the SIHG11N80E-GE3 power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power switching applications. While it has certain advantages, such as its suitability for high-voltage applications and low on-resistance, it also has limitations, including a higher gate charge compared to some alternative models. Understanding its specifications, pin configuration, functional features, and application field plans is crucial for effectively integrating this component into electronic systems. Additionally, being aware of alternative models can provide flexibility in design and procurement decisions.
Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem SIHG11N80E-GE3 w rozwiązaniach technicznych
What is the maximum voltage rating of SIHG11N80E-GE3?
- The maximum voltage rating of SIHG11N80E-GE3 is 800V.
What is the continuous drain current of SIHG11N80E-GE3?
- The continuous drain current of SIHG11N80E-GE3 is 11A.
What is the on-state resistance of SIHG11N80E-GE3?
- The on-state resistance of SIHG11N80E-GE3 is typically 0.38 ohms.
What is the gate threshold voltage of SIHG11N80E-GE3?
- The gate threshold voltage of SIHG11N80E-GE3 is typically 2.5V.
What are the typical applications for SIHG11N80E-GE3?
- SIHG11N80E-GE3 is commonly used in power supplies, motor control, and lighting applications.
What is the maximum junction temperature of SIHG11N80E-GE3?
- The maximum junction temperature of SIHG11N80E-GE3 is 150°C.
Does SIHG11N80E-GE3 have built-in protection features?
- Yes, SIHG11N80E-GE3 has built-in overcurrent and thermal protection.
What is the package type of SIHG11N80E-GE3?
- SIHG11N80E-GE3 comes in a TO-220AB package.
Is SIHG11N80E-GE3 RoHS compliant?
- Yes, SIHG11N80E-GE3 is RoHS compliant.
What are the recommended operating conditions for SIHG11N80E-GE3?
- The recommended operating temperature range for SIHG11N80E-GE3 is -55°C to 150°C, and the recommended gate-source voltage is typically 10V.