SIB456DK-T1-GE3

Introduction

The SIB456DK-T1-GE3 is a semiconductor product that belongs to the category of power MOSFETs. This device is widely used in various electronic applications due to its unique characteristics and functional features. In this entry, we will provide an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SIB456DK-T1-GE3.

Basic Information Overview

• Category: Power MOSFET
• Use: Electronic applications requiring power switching
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-263-3
• Essence: Efficient power management
• Packaging/Quantity: Typically packaged in reels of 800 units

Specifications

• Voltage Rating: 100V
• Continuous Drain Current: 80A
• On-Resistance: 4.5mΩ
• Gate Threshold Voltage: 2.5V
• Maximum Power Dissipation: 200W
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SIB456DK-T1-GE3 has a standard TO-263-3 package with three pins: Gate (G), Drain (D), and Source (S).

| Pin Name | Description | |----------|-------------| | G | Gate control terminal | | D | Drain connection | | S | Source connection |

Functional Features

• High voltage capability for power applications
• Low on-resistance for reduced power losses
• Fast switching speed for improved efficiency
• Enhanced thermal performance for reliability

Advantages and Disadvantages

Advantages

• High voltage rating suitable for diverse applications
• Low on-resistance leading to minimal power dissipation
• Fast switching speed enabling efficient power management

Disadvantages

• Higher cost compared to standard MOSFETs
• Requires careful handling due to sensitivity to static electricity

Working Principles

The SIB456DK-T1-GE3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the device allows the passage of high currents with minimal resistance, facilitating power switching in electronic circuits.

Detailed Application Field Plans

The SIB456DK-T1-GE3 is commonly utilized in the following application fields: - Switching power supplies - Motor control systems - Solar inverters - LED lighting - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SIB456DK-T1-GE3 include: - AUIRF7739L2TRPbF - IPP60R190C6

In conclusion, the SIB456DK-T1-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it a versatile component for various electronic applications. Its efficient power management and reliable performance make it a preferred choice for power switching needs.

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