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VB20100C-M3/8W

VB20100C-M3/8W

Introduction

The VB20100C-M3/8W is a high-performance Schottky rectifier diode designed for various electronic applications. This entry provides an in-depth overview of the product, including its category, use, characteristics, package, essence, packaging/quantity, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Product Overview

  • Category: Electronic Components
  • Use: Rectification in power supply circuits, voltage clamping, and reverse polarity protection.
  • Characteristics: High current capability, low forward voltage drop, fast switching speed, and excellent thermal performance.
  • Package: MELF (Metal Electrode Leadless Face) package.
  • Essence: Schottky rectifier diode.
  • Packaging/Quantity: Available in reels or tubes, quantity varies based on supplier.

Specifications

  • Part Number: VB20100C-M3/8W
  • Maximum Average Forward Current: 20A
  • Peak Forward Surge Current: 150A
  • Reverse Voltage: 100V
  • Forward Voltage Drop: 0.55V at 10A
  • Operating Temperature Range: -65°C to +175°C
  • Storage Temperature Range: -65°C to +175°C

Detailed Pin Configuration

The VB20100C-M3/8W features a standard MELF package with two leads. The pin configuration is as follows: - Pin 1: Anode - Pin 2: Cathode

Functional Features

  • Fast Switching Speed: Enables rapid response in electronic circuits.
  • Low Forward Voltage Drop: Reduces power dissipation and improves efficiency.
  • High Current Capability: Suitable for high-power applications.
  • Excellent Thermal Performance: Ensures reliable operation under varying temperature conditions.

Advantages and Disadvantages

Advantages

  • High current handling capability
  • Low forward voltage drop
  • Fast switching speed
  • Compact MELF package for space-constrained designs

Disadvantages

  • Higher cost compared to standard silicon rectifiers
  • Sensitive to reverse voltage spikes

Working Principles

The VB20100C-M3/8W operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for faster switching and lower forward voltage drop compared to conventional PN-junction diodes. When forward-biased, the diode conducts current with minimal voltage drop, making it suitable for high-frequency and high-efficiency applications.

Detailed Application Field Plans

The VB20100C-M3/8W finds extensive use in the following applications: - Switching power supplies - Voltage clamping circuits - Reverse polarity protection - Solar panel bypass diodes - Motor drive circuits

Detailed and Complete Alternative Models

For users seeking alternative options, the following Schottky rectifier diodes can be considered: - 1. SS34: 40V, 3A, SMA package - 2. SB560: 60V, 5A, DO-201AD package - 3. SR5100: 100V, 5A, TO-220AC package - 4. MBR2045CT: 45V, 20A, TO-220AB package

In conclusion, the VB20100C-M3/8W Schottky rectifier diode offers high-performance characteristics suitable for a wide range of electronic applications, making it a versatile choice for design engineers.

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Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem VB20100C-M3/8W w rozwiązaniach technicznych

  1. What is the maximum voltage rating of the VB20100C-M3/8W diode?

    • The maximum voltage rating of the VB20100C-M3/8W diode is 100 volts.
  2. What is the forward current rating of the VB20100C-M3/8W diode?

    • The forward current rating of the VB20100C-M3/8W diode is 20 amperes.
  3. What is the package type of the VB20100C-M3/8W diode?

    • The VB20100C-M3/8W diode comes in a DPAK (TO-252) package.
  4. What are the typical applications for the VB20100C-M3/8W diode?

    • The VB20100C-M3/8W diode is commonly used in power supply, lighting, and automotive applications.
  5. What is the reverse recovery time of the VB20100C-M3/8W diode?

    • The reverse recovery time of the VB20100C-M3/8W diode is typically 35 nanoseconds.
  6. What is the maximum junction temperature of the VB20100C-M3/8W diode?

    • The maximum junction temperature of the VB20100C-M3/8W diode is 175°C.
  7. Does the VB20100C-M3/8W diode have a built-in Schottky barrier?

    • Yes, the VB20100C-M3/8W diode features a built-in Schottky barrier for improved performance.
  8. Is the VB20100C-M3/8W diode suitable for high-frequency applications?

    • Yes, the VB20100C-M3/8W diode is suitable for high-frequency applications due to its fast switching characteristics.
  9. What is the maximum forward voltage drop of the VB20100C-M3/8W diode at its rated current?

    • The maximum forward voltage drop of the VB20100C-M3/8W diode at its rated current is typically 0.75 volts.
  10. Does the VB20100C-M3/8W diode have a low leakage current?

    • Yes, the VB20100C-M3/8W diode exhibits low leakage current, making it suitable for energy-efficient designs.