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OPB876N55
Product Overview
- Category: Optoelectronic Sensor
- Use: Detection of objects or motion
- Characteristics: High sensitivity, compact size, reliable performance
- Package: Through-hole package
- Essence: Infrared reflective sensor
- Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Operating Wavelength: 890nm
- Sensing Distance: Up to 3mm
- Output Type: Phototransistor
- Operating Temperature: -40°C to 85°C
- Supply Voltage: 5V
- Output Current: 20mA
Detailed Pin Configuration
- Anode (+)
- Cathode (-)
- Collector (C)
- Emitter (E)
Functional Features
- Reliable object detection
- Fast response time
- Low power consumption
- Wide operating temperature range
Advantages and Disadvantages
Advantages
- Compact size
- High sensitivity
- Versatile application
- Low cost
Disadvantages
- Limited sensing distance
- Susceptible to ambient light interference
Working Principles
The OPB876N55 operates based on the principle of infrared reflection. When an object is within the sensing distance, it reflects the emitted infrared light back to the sensor, causing the phototransistor to conduct and produce an output signal.
Detailed Application Field Plans
- Automated Robotics: Used for object detection in robotic arms and automated guided vehicles.
- Printers and Copiers: Employed for paper jam detection and document presence sensing.
- Industrial Automation: Integrated into machinery for part counting and position verification.
Detailed and Complete Alternative Models
- OPB9000: Longer sensing distance but higher cost
- OPB700: Lower sensitivity but wider temperature range
- OPB800W: Waterproof design for outdoor applications
This comprehensive entry provides a detailed overview of the OPB876N55 optoelectronic sensor, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem OPB876N55 w rozwiązaniach technicznych
What is OPB876N55?
- OPB876N55 is a high-performance N-channel power MOSFET designed for various technical applications.
What are the key specifications of OPB876N55?
- The key specifications include a drain-source voltage (VDS) of 55V, continuous drain current (ID) of 75A, and low on-resistance (RDS(on)).
In what technical solutions can OPB876N55 be used?
- OPB876N55 can be used in power supplies, motor control, DC-DC converters, and other high-power applications.
What are the advantages of using OPB876N55 in technical solutions?
- The advantages include high current capability, low on-resistance, and efficient power handling.
How does OPB876N55 contribute to improving system efficiency?
- OPB876N55's low on-resistance helps minimize power losses and improve overall system efficiency.
Are there any application notes or reference designs available for OPB876N55?
- Yes, there are application notes and reference designs available to assist in the implementation of OPB876N55 in various technical solutions.
What thermal considerations should be taken into account when using OPB876N55?
- Proper heat sinking and thermal management are important to ensure optimal performance and reliability of OPB876N55 in high-power applications.
Can OPB876N55 be used in automotive applications?
- Yes, OPB876N55 is suitable for automotive applications such as electric vehicle powertrains and battery management systems.
What are the recommended operating conditions for OPB876N55?
- The recommended operating conditions typically include a specified range of input voltage, temperature, and load conditions.
Where can I find detailed technical documentation for OPB876N55?
- Detailed technical documentation, including datasheets and application notes, can be found on the manufacturer's website or through authorized distributors.