TH58NVG4S0HTA20

Product Overview

• Category: Integrated Circuit (IC)
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High-speed operation
  • Compact size
• Package: Surface Mount Technology (SMT)
• Essence: Flash memory chip
• Packaging/Quantity: Individual chip, typically sold in reels or trays

Specifications

• Manufacturer: Toshiba Corporation
• Part Number: TH58NVG4S0HTA20
• Memory Type: NAND Flash
• Memory Capacity: 4 gigabits (512 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The TH58NVG4S0HTA20 has a total of 8 pins arranged as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. HOLD: Suspends ongoing data transfer
4. WP: Write protect input
5. DO: Data output
6. DI: Data input
7. CLK: Clock input
8. CS: Chip select input

Functional Features

• High-speed data transfer rates
• Low power consumption
• Error correction code (ECC) for data integrity
• Block erase and page program operations
• Hardware write protection
• Software reset function

Advantages and Disadvantages

Advantages: - Fast read and write speeds - Compact size allows for space-efficient designs - Low power consumption extends battery life - High endurance ensures long-term reliability - Error correction code enhances data integrity

Disadvantages: - Limited storage capacity compared to other memory technologies - Relatively higher cost per unit of storage - Susceptible to wear-out over time due to program/erase cycles

Working Principles

The TH58NVG4S0HTA20 utilizes NAND flash memory technology to store and retrieve digital data. It employs a series of memory cells organized in a grid-like structure, where each cell can store multiple bits of information. Data is written to and read from the memory cells by applying appropriate voltage levels to the control pins.

During programming, electrons are trapped in the floating gate of each memory cell, altering its electrical characteristics and representing the stored data. Erasing the memory involves removing these trapped electrons, resetting the cell to an unprogrammed state.

Detailed Application Field Plans

The TH58NVG4S0HTA20 is commonly used in various electronic devices that require non-volatile storage, such as:

1. Solid-state drives (SSDs)
2. USB flash drives
3. Memory cards (SD, microSD, etc.)
4. Embedded systems
5. Consumer electronics (smartphones, tablets, etc.)

Detailed and Complete Alternative Models

1. Manufacturer: Samsung Electronics

   • Part Number: K9F1G08U0D
   • Memory Capacity: 1 gigabit (128 megabytes)
   • Interface: Parallel NOR Flash

2. Manufacturer: Micron Technology

   • Part Number: MT29F2G08ABAEAWP
   • Memory Capacity: 2 gigabits (256 megabytes)
   • Interface: Parallel NAND Flash

3. Manufacturer: Intel Corporation

   • Part Number: 28F256K3C120
   • Memory Capacity: 256 kilobits (32 kilobytes)
   • Interface: Parallel NOR Flash

4. Manufacturer: Macronix International

   • Part Number: MX25L12835FZNI-10G
   • Memory Capacity: 128 megabits (16 megabytes)
   • Interface: Serial NOR Flash

These alternative models offer different memory capacities, interfaces, and form factors to suit various application requirements.

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