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TC58NYG2S0HBAI4

TC58NYG2S0HBAI4

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory storage
  • Characteristics: High-speed, non-volatile, flash memory
  • Package: Surface Mount Technology (SMT)
  • Essence: Data storage and retrieval
  • Packaging/Quantity: Tape and reel packaging, quantity varies

Specifications

  • Memory Type: NAND Flash
  • Density: 2GB
  • Interface: Serial Peripheral Interface (SPI)
  • Operating Voltage: 3.3V
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Up to 10 years
  • Program/Erase Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The TC58NYG2S0HBAI4 has a total of 8 pins:

  1. VCC: Power supply voltage
  2. GND: Ground reference
  3. CS: Chip select for SPI communication
  4. SCK: Serial clock input
  5. SI: Serial data input
  6. SO: Serial data output
  7. WP: Write protect pin
  8. HOLD: Hold pin for suspending operations

Functional Features

  • High-speed data transfer rate
  • Non-volatile memory retains data even when power is disconnected
  • Low power consumption
  • Compact size and lightweight design
  • Easy integration with existing systems
  • Reliable and durable performance

Advantages and Disadvantages

Advantages

  • Fast data transfer speed enhances system performance
  • Non-volatile memory ensures data integrity during power outages
  • Low power consumption prolongs battery life in portable devices
  • Small form factor allows for space-efficient designs
  • Compatibility with SPI interface simplifies integration

Disadvantages

  • Limited storage capacity compared to other memory technologies
  • Relatively higher cost per gigabyte compared to traditional hard drives

Working Principles

The TC58NYG2S0HBAI4 utilizes NAND flash memory technology. It stores data in a series of memory cells organized into blocks and pages. When data is written, the memory cells are electrically programmed with charges. To read the data, the charges are detected and converted back into digital information. The SPI interface facilitates communication between the IC and the host system.

Detailed Application Field Plans

The TC58NYG2S0HBAI4 is commonly used in various applications, including:

  1. Consumer Electronics: Smartphones, tablets, digital cameras
  2. Automotive: Infotainment systems, navigation devices
  3. Industrial: Embedded systems, control units
  4. Networking: Routers, switches, network storage devices

Detailed and Complete Alternative Models

  1. TC58NVG2S0HBAI4: Similar specifications, but with higher density (4GB)
  2. TC58NYG2S0HBAI8: Similar specifications, but with double the quantity per package
  3. TC58NVG2S0HBAI8: Higher density (4GB) and double the quantity per package

(Note: This list is not exhaustive and may vary based on availability and specific requirements.)

This entry provides an overview of the TC58NYG2S0HBAI4, a high-speed, non-volatile flash memory IC. It includes information about its category, use, characteristics, package, essence, packaging/quantity, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem TC58NYG2S0HBAI4 w rozwiązaniach technicznych

Sure! Here are 10 common questions and answers related to the application of TC58NYG2S0HBAI4 in technical solutions:

  1. Q: What is TC58NYG2S0HBAI4? A: TC58NYG2S0HBAI4 is a specific model of NAND flash memory chip manufactured by Toshiba.

  2. Q: What is the storage capacity of TC58NYG2S0HBAI4? A: The storage capacity of TC58NYG2S0HBAI4 can vary, but it typically ranges from 2GB to 64GB.

  3. Q: What are some common applications for TC58NYG2S0HBAI4? A: TC58NYG2S0HBAI4 is commonly used in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

  4. Q: What is the interface protocol supported by TC58NYG2S0HBAI4? A: TC58NYG2S0HBAI4 supports the standard Serial Peripheral Interface (SPI) protocol.

  5. Q: What is the operating voltage range for TC58NYG2S0HBAI4? A: The operating voltage range for TC58NYG2S0HBAI4 is typically between 2.7V and 3.6V.

  6. Q: Can TC58NYG2S0HBAI4 be used in industrial-grade applications? A: Yes, TC58NYG2S0HBAI4 is available in industrial-grade versions that offer enhanced durability and reliability for harsh environments.

  7. Q: Does TC58NYG2S0HBAI4 support wear-leveling algorithms? A: Yes, TC58NYG2S0HBAI4 supports wear-leveling algorithms to ensure even distribution of data writes across the memory cells, prolonging its lifespan.

  8. Q: What is the maximum read and write speed of TC58NYG2S0HBAI4? A: The maximum read and write speeds of TC58NYG2S0HBAI4 can vary depending on the specific configuration, but it typically ranges from 25MB/s to 100MB/s.

  9. Q: Can TC58NYG2S0HBAI4 be used as a boot device in embedded systems? A: Yes, TC58NYG2S0HBAI4 can be used as a boot device in embedded systems, thanks to its fast access times and reliable performance.

  10. Q: Are there any specific software tools or drivers required for working with TC58NYG2S0HBAI4? A: Yes, Toshiba provides software development kits (SDKs) and drivers that facilitate the integration and management of TC58NYG2S0HBAI4 in various technical solutions.

Please note that the answers provided here are general and may vary based on specific product specifications and requirements.