TC58NYG1S3HBAI4

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory storage
• Characteristics: High-speed, non-volatile, flash memory
• Package: Surface Mount Technology (SMT)
• Essence: Data storage and retrieval
• Packaging/Quantity: Tape and reel packaging, 1000 units per reel

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gigabit (128 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Erase/Program Cycles: 100,000 cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The TC58NYG1S3HBAI4 has a total of 8 pins:

1. VCC: Power supply voltage input
2. GND: Ground reference
3. HOLD: Suspends ongoing data transfer
4. WP: Write protect input
5. SIO0: Serial data input/output
6. SIO1: Serial data output
7. SIO2: Serial data input/output
8. SIO3: Serial data input/output

Functional Features

• High-speed data transfer with SPI interface
• Non-volatile memory retains data even when power is disconnected
• Efficient erase and program operations
• Low power consumption during standby mode
• Reliable data retention for long periods

Advantages and Disadvantages

Advantages: - High-speed data transfer enables quick access to stored information - Non-volatile memory ensures data integrity even in the event of power loss - Efficient erase and program operations allow for easy data modification - Low power consumption helps prolong battery life in portable devices

Disadvantages: - Limited capacity compared to other memory storage options - Relatively lower data retention period compared to some alternatives

Working Principles

The TC58NYG1S3HBAI4 utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. The SPI interface facilitates communication between the IC and the host device, enabling fast and reliable data transfer.

Detailed Application Field Plans

The TC58NYG1S3HBAI4 is commonly used in various electronic devices that require non-volatile memory storage, such as:

1. Consumer electronics: Digital cameras, smartphones, tablets, portable media players
2. Automotive: Infotainment systems, navigation devices, instrument clusters
3. Industrial: Embedded systems, control units, data loggers
4. Networking: Routers, switches, network storage devices

Detailed and Complete Alternative Models

1. TC58NVG1S3HTA00: Similar specifications, but with higher capacity (2 Gigabits)
2. TC58NVG1S3HTA01: Similar specifications, but with higher capacity (4 Gigabits)
3. TC58NVG1S3HTA02: Similar specifications, but with higher capacity (8 Gigabits)
4. TC58NVG1S3HTA03: Similar specifications, but with higher capacity (16 Gigabits)

These alternative models offer increased storage capacity while maintaining similar functionality and characteristics to the TC58NYG1S3HBAI4.

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