TC58BVG1S3HBAI4

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory storage
• Characteristics: High-speed, non-volatile, low power consumption
• Package: Surface Mount Technology (SMT)
• Essence: Flash memory chip
• Packaging/Quantity: Tape and reel packaging, 1000 units per reel

Specifications

• Memory Capacity: 1 gigabit (Gb)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 20 years
• Programming Time: Less than 10ms per word
• Erase Time: Less than 3s per sector

Detailed Pin Configuration

The TC58BVG1S3HBAI4 has a total of 8 pins:

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• High-speed data transfer with SPI interface
• Non-volatile memory retains data even when power is disconnected
• Low power consumption for extended battery life
• Sector-based erasing and byte-level programming
• Write protection and hold functions for data security

Advantages and Disadvantages

Advantages

• Fast data transfer rate due to SPI interface
• Compact size and surface mount package for easy integration
• Low power consumption extends battery life in portable devices
• Reliable data retention for up to 20 years
• Sector-based erasing allows efficient memory management

Disadvantages

• Limited memory capacity compared to higher-end flash memory chips
• Requires external components for proper operation
• Sensitive to electrostatic discharge (ESD) and voltage spikes

Working Principles

The TC58BVG1S3HBAI4 is based on the principles of flash memory technology. It utilizes a floating gate transistor structure to store data in an electrically isolated state. The data can be programmed or erased using electrical signals, allowing for non-volatile storage.

Detailed Application Field Plans

The TC58BVG1S3HBAI4 is commonly used in various electronic devices that require non-volatile memory storage. Some typical application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras
2. Automotive: Infotainment systems, navigation devices
3. Industrial: Embedded systems, control units
4. Networking: Routers, switches, modems

Detailed and Complete Alternative Models

1. TC58NVG1S3HBAI4: Similar specifications but with higher memory capacity (2Gb)
2. TC58BVH1S3HBAI4: Lower power consumption variant with the same memory capacity (1Gb)
3. TC58CVG1S3HBAI4: Extended temperature range version (-40°C to +105°C) with the same memory capacity (1Gb)

(Note: The above alternative models are provided for reference and may not cover all available options.)

This entry provides a comprehensive overview of the TC58BVG1S3HBAI4 flash memory chip, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.