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STD80N4F6

STD80N4F6

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High voltage, low on-resistance, fast switching speed
  • Package: TO-252 (DPAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

  • Voltage Rating: 40V
  • Current Rating: 80A
  • On-Resistance: 4mΩ
  • Gate Charge: 110nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The STD80N4F6 follows the standard pin configuration for a TO-252 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for improved efficiency
  • High current handling capability for robust performance

Advantages and Disadvantages

Advantages

  • High voltage rating
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher gate charge compared to some alternative models
  • Limited operating temperature range

Working Principles

The STD80N4F6 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device.

Detailed Application Field Plans

The STD80N4F6 is suitable for various power switching applications, including: - Motor control systems - Power supplies - Inverters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the STD80N4F6 include: - STP80NF10 - IRFP4568 - FDP8878

In conclusion, the STD80N4F6 Power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for power switching applications in various fields.

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Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem STD80N4F6 w rozwiązaniach technicznych

  1. What is STD80N4F6?

    • STD80N4F6 is a power MOSFET transistor designed for high-performance applications, offering low on-state resistance and high switching speed.
  2. What are the key specifications of STD80N4F6?

    • The key specifications include a drain-source voltage (VDS) of 40V, continuous drain current (ID) of 80A, and a low on-state resistance (RDS(on)).
  3. In what technical solutions can STD80N4F6 be used?

    • STD80N4F6 can be used in various technical solutions such as motor control, power supplies, DC-DC converters, and automotive applications.
  4. How does STD80N4F6 contribute to efficient power management?

    • STD80N4F6's low on-state resistance helps minimize power losses and improve energy efficiency in power management applications.
  5. What are the thermal considerations when using STD80N4F6 in a design?

    • Proper heat sinking and thermal management are important to ensure that STD80N4F6 operates within its specified temperature range for reliable performance.
  6. Can STD80N4F6 be used in automotive applications?

    • Yes, STD80N4F6 is suitable for automotive applications such as motor control, battery management systems, and power distribution.
  7. What are the advantages of using STD80N4F6 in motor control applications?

    • STD80N4F6 offers high current-carrying capability and low on-state resistance, making it well-suited for motor control applications with improved efficiency and performance.
  8. Are there any application notes or reference designs available for using STD80N4F6?

    • Yes, application notes and reference designs are available to guide engineers in implementing STD80N4F6 in various technical solutions.
  9. How does STD80N4F6 perform in high-frequency switching applications?

    • STD80N4F6 exhibits fast switching characteristics, making it suitable for high-frequency switching applications such as DC-DC converters and synchronous rectification.
  10. What are the reliability and longevity considerations when using STD80N4F6 in technical solutions?

    • Proper design considerations, including voltage and current derating, along with adherence to recommended operating conditions, can help ensure the reliability and longevity of STD80N4F6 in technical solutions.