N57M5114VP2D50TG

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics:
  • High-speed performance
  • Large storage capacity
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory storage
• Packaging/Quantity: Individually packaged, typically sold in bulk quantities

Specifications

• Model: N57M5114VP2D50TG
• Memory Type: NAND Flash
• Capacity: 512 Megabytes (MB)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 3.3 Volts (V)
• Speed: Up to 50 Megahertz (MHz)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The N57M5114VP2D50TG IC has a total of 48 pins. The pin configuration is as follows:

1. VCC (Power Supply)
2. GND (Ground)
3. CE (Chip Enable)
4. WE (Write Enable)
5. RE (Read Enable)
6. A0-A18 (Address Inputs)
7. DQ0-DQ7 (Data Input/Output)
8. WP (Write Protect)
9. HOLD (Hold Input)
10. RST (Reset Input)
11. CLK (Clock Input)
12. NC (No Connection)

Functional Features

• High-speed data transfer
• Reliable and durable non-volatile storage
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Support for various data protection mechanisms
• Easy integration with microcontrollers and other devices

Advantages

• Fast read and write speeds
• Large storage capacity
• Low power consumption
• Compact form factor
• Wide temperature range support
• High reliability and data integrity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance (number of erase/write cycles)
• Requires specialized programming algorithms for optimal performance

Working Principles

The N57M5114VP2D50TG is based on NAND flash memory technology. It stores data in a grid-like structure, where each cell can hold multiple bits of information. The memory cells are organized into blocks, and data can be written or read at the block level. To write data, the memory cells are first erased, and then new data is programmed into them. Reading data involves retrieving the stored charge from the memory cells.

Detailed Application Field Plans

The N57M5114VP2D50TG memory module finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - USB flash drives - Memory cards (SD, microSD, etc.) - Embedded systems - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. N57M5128VP2D50TG - 1 Gigabyte (GB) capacity variant
2. N57M5216VP2D50TG - 2 Gigabytes (GB) capacity variant
3. N57M5416VP2D50TG - 4 Gigabytes (GB) capacity variant
4. N57M5512VP2D50TG - 8 Gigabytes (GB) capacity variant
5. N57M5616VP2D50TG - 16 Gigabytes (GB) capacity variant

These alternative models offer increased storage capacities while maintaining similar specifications and features as the N57M5114VP2D50TG.

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