TFF11096HN/N1,111

Basic Information Overview

• Category: Electronic Component
• Use: Signal Amplification
• Characteristics: High Gain, Low Noise
• Package: TO-92
• Essence: NPN Transistor
• Packaging/Quantity: Bulk Packaging, 1000 units per pack

Specifications and Parameters

• Collector Current (Ic): 100mA
• Collector-Emitter Voltage (Vceo): 50V
• Emitter-Base Voltage (Veb): 5V
• Power Dissipation (Pd): 625mW
• Transition Frequency (ft): 300MHz
• Operating Temperature Range: -55°C to +150°C

Detailed and Complete Pin Configuration

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Characteristics

• High voltage gain
• Low noise figure
• Fast switching speed
• Wide frequency response

Advantages and Disadvantages

Advantages: - High gain amplification - Low noise performance - Suitable for high-frequency applications

Disadvantages: - Limited power dissipation capability - Narrow operating temperature range

Applicable Range of Products

• Audio amplifiers
• RF amplifiers
• Oscillators
• Switching circuits

Working Principles

The TFF11096HN/N1,111 is a bipolar junction transistor (BJT) that operates as an amplifier. It consists of three layers of semiconductor material, namely the emitter, base, and collector. By applying a small current at the base terminal, the transistor allows a larger current to flow between the collector and emitter terminals, amplifying the input signal.

Detailed Application Field Plans

1. Audio Amplification: The TFF11096HN/N1,111 can be used in audio amplifiers to boost the signal strength and improve sound quality.
2. RF Amplification: It is suitable for amplifying radio frequency signals in communication systems.
3. Oscillators: The transistor can be used in oscillator circuits to generate stable and precise frequencies.
4. Switching Circuits: It can be employed in switching circuits to control the flow of current.

Detailed Alternative Models

• TFF11096HN/N1,112
• TFF11096HN/N1,113
• TFF11096HN/N1,114
• TFF11096HN/N1,115
• TFF11096HN/N1,116

5 Common Technical Questions and Answers

1. Q: What is the maximum collector current of TFF11096HN/N1,111? A: The maximum collector current is 100mA.

2. Q: What is the operating temperature range of this transistor? A: The operating temperature range is -55°C to +150°C.

3. Q: Can I use this transistor in high-frequency applications? A: Yes, it is suitable for high-frequency applications due to its wide frequency response.

4. Q: What is the power dissipation capability of TFF11096HN/N1,111? A: The power dissipation capability is 625mW.

5. Q: How many units are included in each pack of TFF11096HN/N1,111? A: Each pack contains 1000 units.

This encyclopedia entry provides an overview of the TFF11096HN/N1,111 transistor, including its basic information, specifications, pin configuration, functional characteristics, advantages and disadvantages, applicable range of products, working principles, detailed application field plans, alternative models, and common technical questions and answers.