BUK9529-100B,127

Product Category: Power MOSFET

Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High power handling capacity, low on-state resistance, fast switching speed - Package: TO-220AB - Essence: Efficient power management - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Voltage Rating: 100V - Current Rating: 60A - On-State Resistance (RDS(on)): 10mΩ - Gate Threshold Voltage (VGS(th)): 2V to 4V - Maximum Power Dissipation: 200W

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source

Functional Features: - High current capability - Low conduction losses - Fast switching speed - Avalanche energy specified - Improved dv/dt capability

Advantages: - High power handling capacity - Low on-state resistance - Enhanced thermal performance - Reliable and durable - Suitable for high-frequency applications

Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to electrostatic discharge (ESD)

Working Principles: The BUK9529-100B,127 operates based on the principle of field-effect transistors, utilizing an electric field to control the conductivity of the device. When a sufficient voltage is applied to the gate terminal, it creates an electric field that modulates the conductivity between the drain and source terminals, allowing for efficient power switching.

Detailed Application Field Plans: - Switched-mode power supplies - Motor control - DC-DC converters - Inverters - Battery management systems

Detailed and Complete Alternative Models: - IRF540N - STP55NF06L - FDP8870

This comprehensive entry provides detailed information about the BUK9529-100B,127 Power MOSFET, covering its category, basic overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.