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JAN2N2219
Product Overview
- Category: Transistor
- Use: Amplification and switching in electronic circuits
- Characteristics: High frequency, low power, NPN bipolar junction transistor
- Package: TO-39 metal can package
- Essence: Small signal transistor for general purpose applications
- Packaging/Quantity: Typically sold in packs of 10 or 100 units
Specifications
- Type: NPN
- Maximum Power Dissipation: 500 mW
- Collector-Base Voltage (Vcbo): 75 V
- Collector-Emitter Voltage (Vceo): 40 V
- Emitter-Base Voltage (Vebo): 6 V
- Collector Current (Ic): 800 mA
- DC Current Gain (hfe): 30 - 300
- Transition Frequency (ft): 250 MHz
- Operating Temperature Range: -65°C to 200°C
Detailed Pin Configuration
- Collector (C)
- Base (B)
- Emitter (E)
Functional Features
- High transition frequency for RF applications
- Low power dissipation
- Wide operating temperature range
Advantages and Disadvantages
Advantages
- Suitable for high-frequency applications
- Low noise and distortion
- Wide operating temperature range
Disadvantages
- Limited maximum power dissipation
- Relatively low current gain compared to some alternatives
Working Principles
The JAN2N2219 is a bipolar junction transistor that operates by controlling the flow of current between its collector and emitter terminals using a small current at its base terminal. It amplifies and switches electronic signals based on this principle.
Detailed Application Field Plans
The JAN2N2219 is commonly used in: - Radio frequency (RF) amplifiers - Oscillators - Signal generators - Switching circuits
Detailed and Complete Alternative Models
- 2N2219
- 2N2222
- 2N2907
- BC547
- BC548
In conclusion, the JAN2N2219 is a versatile NPN transistor suitable for various electronic applications, especially those involving high frequencies and low power requirements.
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Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem JAN2N2219 w rozwiązaniach technicznych
What is the JAN2N2219 transistor used for?
- The JAN2N2219 transistor is commonly used in high-frequency amplifier and oscillator circuits.
What are the key specifications of the JAN2N2219 transistor?
- The JAN2N2219 is a NPN silicon transistor with a maximum collector current of 800mA, a maximum power dissipation of 800mW, and a transition frequency of 250MHz.
Can the JAN2N2219 be used in low-power applications?
- Yes, the JAN2N2219 can be used in low-power applications due to its relatively low power dissipation and moderate collector current rating.
What are the typical operating conditions for the JAN2N2219?
- The JAN2N2219 operates within a temperature range of -65°C to 200°C and is typically used in common emitter or common base configurations.
Is the JAN2N2219 suitable for RF amplifier designs?
- Yes, the JAN2N2219 is well-suited for RF amplifier designs due to its high transition frequency and low noise characteristics.
Can the JAN2N2219 be used in switching applications?
- While it is primarily designed for amplification, the JAN2N2219 can also be used in low-power switching applications.
What are some common alternatives to the JAN2N2219?
- Common alternatives to the JAN2N2219 include the 2N2219, 2N2222, and PN2222 transistors, which offer similar performance characteristics.
Are there any specific considerations when designing with the JAN2N2219?
- Designers should consider the voltage and current requirements of their specific application, as well as the thermal management of the transistor.
What are the typical gain characteristics of the JAN2N2219?
- The JAN2N2219 has a typical DC current gain (hfe) of 100 to 300 at a collector current of 10mA.
Where can I find detailed application notes for using the JAN2N2219 in technical solutions?
- Detailed application notes for the JAN2N2219 can be found in semiconductor datasheets, application guides, and technical reference manuals from manufacturers and industry sources.