N25Q256A33EF840E

Basic Information Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval
• Characteristics:
  • High capacity
  • Fast read/write speeds
  • Low power consumption
• Package: 8-pin SOIC
• Essence: Flash memory chip
• Packaging/Quantity: Individually packaged, quantity varies based on manufacturer

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Operations:
  • Sector erase time: 100ms (typical)
  • Page program time: 0.7ms (typical)

Detailed Pin Configuration

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• High-speed data transfer using SPI interface
• Efficient sector erase and page program operations
• Reliable data retention with built-in error correction codes (ECC)
• Flexible write protection options for data security
• Deep power-down mode for ultra-low power consumption

Advantages

• Large storage capacity suitable for various applications
• Fast read/write speeds enhance overall system performance
• Low power consumption extends battery life in portable devices
• Compact package size allows for easy integration into designs
• Robust error correction ensures data integrity

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per bit compared to traditional hard drives
• Susceptible to data loss in case of power failure during write operations

Working Principles

The N25Q256A33EF840E is based on the NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed and erased. The Serial Peripheral Interface (SPI) allows for high-speed communication between the chip and the host device. When data is read, the stored charge in the memory cells is measured to determine the logic state. During write operations, the floating gate is charged or discharged to store the desired data.

Detailed Application Field Plans

• Embedded systems: Used for firmware storage in microcontrollers and IoT devices.
• Consumer electronics: Enables data storage in smartphones, tablets, and digital cameras.
• Automotive: Provides non-volatile memory for infotainment systems and instrument clusters.
• Industrial automation: Used for program storage in PLCs and industrial control systems.
• Networking equipment: Enables firmware storage in routers, switches, and network appliances.

Detailed and Complete Alternative Models

1. N25Q128A13EF840E: 128 Megabit capacity, similar specifications and features.
2. N25Q512A33EF840E: 512 Megabit capacity, similar specifications and features.
3. N25Q256A11EF840E: 256 Megabit capacity, lower operating temperature range.

(Note: These alternative models are provided as examples and may not represent an exhaustive list.)

This entry provides an overview of the N25Q256A33EF840E flash memory chip. It includes basic information about its category, use, characteristics, package, and essence. The specifications, pin configuration, functional features, advantages, and disadvantages are also discussed. Additionally, the working principles, application field plans, and alternative models are provided to give a comprehensive understanding of the product.