MT47R256M8EB-25E:C

Product Overview

Category

MT47R256M8EB-25E:C belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for temporary data storage and retrieval.

Characteristics

• High-speed data access
• Volatile memory
• Large storage capacity
• Low power consumption
• Compact package size

Package

MT47R256M8EB-25E:C is packaged in a small form factor dual in-line memory module (DIMM).

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval capabilities, enhancing the overall performance of electronic devices.

Packaging/Quantity

Each package contains one MT47R256M8EB-25E:C DRAM module.

Specifications

• Memory Type: DDR4 SDRAM
• Capacity: 256 Megabytes (MB)
• Speed Grade: PC4-3200
• Operating Voltage: 1.2 Volts
• Organization: 256M x 8
• Refresh Rate: 7.8 µs (8192 cycles/64 ms)

Detailed Pin Configuration

The MT47R256M8EB-25E:C DRAM module has a total of 288 pins. The pin configuration is as follows:

• Pins 1-96: Data Input/Output (DQ)
• Pins 97-104: Address Inputs (A0-A7)
• Pins 105-108: Bank Select Inputs (BA0-BA2)
• Pins 109-110: Chip Select Inputs (CS0#, CS1#)
• Pins 111-112: Clock Inputs (CK, CK#)
• Pins 113-116: Data Mask Inputs (DM0-DM3)
• Pins 117-118: Data Strobe Inputs (DQS, DQS#)
• Pins 119-120: Data Strobe Outputs (DQSB, DQSB#)
• Pins 121-124: Data Mask Outputs (DM0#, DM1#, DM2#, DM3#)
• Pins 125-126: Data Strobe Outputs (DQS#, DQS)
• Pins 127-128: Data Strobe Inputs (DQSB#, DQSB)
• Pins 129-136: Address Inputs (A8-A15)
• Pins 137-144: Address Inputs (A16-A23)
• Pins 145-152: Address Inputs (A24-A31)
• Pins 153-160: Address Inputs (A32-A39)
• Pins 161-168: Address Inputs (A40-A47)
• Pins 169-176: Address Inputs (A48-A55)
• Pins 177-184: Address Inputs (A56-A63)
• Pins 185-192: Address Inputs (A64-A71)
• Pins 193-200: Address Inputs (A72-A79)
• Pins 201-208: Address Inputs (A80-A87)
• Pins 209-216: Address Inputs (A88-A95)
• Pins 217-224: Address Inputs (A96-A103)
• Pins 225-232: Address Inputs (A104-A111)
• Pins 233-240: Address Inputs (A112-A119)
• Pins 241-248: Address Inputs (A120-A127)
• Pins 249-256: Address Inputs (A128-A135)
• Pins 257-264: Address Inputs (A136-A143)
• Pins 265-272: Address Inputs (A144-A151)
• Pins 273-280: Address Inputs (A152-A159)
• Pins 281-288: Address Inputs (A160-A167)

Functional Features

• High-speed data transfer rate
• Error correction capabilities
• Auto-refresh and self-refresh modes
• On-die termination for improved signal integrity
• Low power consumption in standby mode

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Compact form factor

Disadvantages

• Volatile memory (data is lost when power is turned off)
• Relatively higher cost compared to other memory types

Working Principles

MT47R256M8EB-25E:C operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When a read or write operation is performed, the memory controller sends the appropriate signals to access the desired data.

Detailed Application Field Plans

MT47R256M8EB-25E:C can be used in various applications, including: - Personal computers - Laptops - Servers - Workstations