MT47H128M16RT-25E AAT:C

Product Overview

Category

The MT47H128M16RT-25E AAT:C belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed operation: The MT47H128M16RT-25E AAT:C offers fast data access and transfer rates, enabling efficient processing of large amounts of information.
• Large storage capacity: With a capacity of 128 megabits (16 megabytes), this memory device can store a significant amount of data.
• Low power consumption: The product is designed to minimize power usage, making it suitable for battery-powered devices.
• Reliable performance: It features robust error correction capabilities and high endurance, ensuring data integrity and longevity.

Package

The MT47H128M16RT-25E AAT:C is available in a compact and standardized package that facilitates easy integration into various electronic systems. The specific package type may vary depending on the manufacturer.

Essence

The essence of the MT47H128M16RT-25E AAT:C lies in its ability to provide reliable and high-performance data storage solutions for electronic devices.

Packaging/Quantity

Typically, the MT47H128M16RT-25E AAT:C is packaged in trays or reels, with each unit individually sealed to protect it from external elements. The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 128 Megabits x 16 bits
• Operating Voltage: 2.5V
• Speed Grade: 25E
• Temperature Range: Industrial (-40°C to +85°C)
• Interface: Double Data Rate 3 (DDR3)
• Pin Count: 96 pins
• Package Type: Small Outline Dual In-Line Memory Module (SO-DIMM)

Detailed Pin Configuration

The MT47H128M16RT-25E AAT:C features a total of 96 pins, each serving a specific purpose in the memory device's operation. The detailed pin configuration is as follows:

(Pin Number) - (Pin Name) - (Function) 1 - VDD - Power Supply 2 - DQ0 - Data Input/Output Bit 0 3 - DQ1 - Data Input/Output Bit 1 4 - DQ2 - Data Input/Output Bit 2 5 - DQ3 - Data Input/Output Bit 3 6 - DQ4 - Data Input/Output Bit 4 7 - DQ5 - Data Input/Output Bit 5 8 - DQ6 - Data Input/Output Bit 6 9 - DQ7 - Data Input/Output Bit 7 10 - DQ8 - Data Input/Output Bit 8 11 - DQ9 - Data Input/Output Bit 9 12 - DQ10 - Data Input/Output Bit 10 13 - DQ11 - Data Input/Output Bit 11 14 - DQ12 - Data Input/Output Bit 12 15 - DQ13 - Data Input/Output Bit 13 16 - DQ14 - Data Input/Output Bit 14 17 - DQ15 - Data Input/Output Bit 15 18 - VSS - Ground 19 - VDD - Power Supply 20 - NC - No Connection ... (Continued for remaining pins)

Functional Features

The MT47H128M16RT-25E AAT:C offers several functional features that enhance its performance and usability:

1. High-speed data transfer: The device supports fast data transfer rates, enabling efficient processing and retrieval of information.
2. Error correction capabilities: It incorporates advanced error correction techniques to ensure data integrity and minimize the risk of data loss or corruption.
3. Low power consumption: The memory device is designed to operate with minimal power consumption, making it suitable for energy-efficient electronic devices.
4. Compatibility: It conforms to industry-standard DDR3 interface specifications, ensuring compatibility with a wide range of electronic systems.

Advantages and Disadvantages

Advantages

• High-speed operation facilitates quick data access and processing.
• Large storage capacity allows for storing significant amounts of data.
• Low power consumption prolongs battery life in portable devices.
• Robust error correction capabilities ensure data integrity.
• Compatibility with industry standards enables easy integration into various systems.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability beyond the specified capacity.
• Sensitivity to electrical noise and environmental conditions.

Working Principles

The MT47H128M16RT-25E AAT:C operates based on the principles of dynamic random access memory (DRAM). It stores data