MT46H64M32LFCX-5 AIT:B

Product Overview

Category

The MT46H64M32LFCX-5 AIT:B belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for data storage and retrieval purposes.

Characteristics

• High-speed operation: The MT46H64M32LFCX-5 AIT:B offers fast data access and transfer rates, making it suitable for applications that require quick processing.
• Large storage capacity: With a capacity of 64 megabytes (MB), this DRAM chip can store a significant amount of data.
• Low power consumption: The chip is designed to consume minimal power, ensuring efficient energy usage in electronic devices.
• Compact package: The MT46H64M32LFCX-5 AIT:B comes in a small form factor package, allowing for easy integration into various electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Packaging/Quantity

The MT46H64M32LFCX-5 AIT:B is typically packaged in trays or reels. Each tray or reel contains a specific quantity of chips, usually ranging from hundreds to thousands, depending on customer requirements.

Specifications

• Memory Type: Dynamic Random-Access Memory (DRAM)
• Organization: 64 Megabytes (64MB)
• Speed: 5 nanoseconds (ns)
• Interface: Double Data Rate 3 (DDR3)
• Operating Voltage: 1.5 volts (V)
• Package Type: Fine-pitch Ball Grid Array (FBGA)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT46H64M32LFCX-5 AIT:B has a total of 90 pins, which are arranged as follows:

• Pin 1: VDD
• Pin 2: DQ0
• Pin 3: DQ1
• ...
• Pin 89: VSS
• Pin 90: NC

Please refer to the product datasheet for the complete pin configuration details.

Functional Features

• High-speed data access: The MT46H64M32LFCX-5 AIT:B offers fast read and write operations, enabling efficient data processing.
• Burst mode support: This chip supports burst mode, allowing for consecutive data transfers without the need for repeated commands.
• Auto-refresh capability: The DRAM chip automatically refreshes stored data at regular intervals, ensuring data integrity.
• Self-timed operation: The chip's internal timing circuitry eliminates the need for external clock signals, simplifying system design.

Advantages and Disadvantages

Advantages

• Fast data access and transfer rates
• Large storage capacity
• Low power consumption
• Compact form factor
• RoHS compliant

Disadvantages

• Relatively higher cost compared to other memory technologies
• Requires periodic refreshing to maintain data integrity

Working Principles

The MT46H64M32LFCX-5 AIT:B operates based on the principles of dynamic random-access memory. It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. When data is requested, the chip retrieves it by accessing the appropriate memory cells and transferring the data to the requesting device.

Detailed Application Field Plans

The MT46H64M32LFCX-5 AIT:B finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Its high-speed operation, large storage capacity, and low power consumption make it suitable for demanding applications that require efficient data processing and storage.

Detailed and Complete Alternative Models

• MT46H64M32LFCX-5 AIT:A
• MT46H64M32LFCX-5 IT:B
• MT46H64M32LFCX-5 IT:A
• MT46H64M32LFCX-5 AIT:C
• MT46H64M32LFCX-5 IT:C

These alternative models offer similar specifications and functionality to the MT46H64M32LFCX-5 AIT:B, providing customers with options based on their specific requirements.

In conclusion, the MT46H64M32LFCX-5 AIT:B is a high-performance DRAM chip with fast data access, large storage capacity, and low power consumption. It finds applications in various electronic devices and offers advantages such as compact packaging and RoHS compliance. However, it requires periodic refreshing and may have a higher cost compared to other memory technologies.