Micron Technology Inc.
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MT41K1G4RH-125:E
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MT41K1G4RH-125:E

Product Overview

Category

MT41K1G4RH-125:E belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems, servers, and high-performance computing applications.

Characteristics

  • High-speed operation
  • Large storage capacity
  • Low power consumption
  • Reliable performance

Package

MT41K1G4RH-125:E is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval for various computing devices.

Packaging/Quantity

MT41K1G4RH-125:E is typically packaged individually and sold in quantities of one unit per package.

Specifications

  • Memory Type: DDR3 SDRAM
  • Capacity: 1GB
  • Speed: 125 MHz
  • Voltage: 1.5V
  • Organization: 128M x 8
  • Interface: 204-pin SODIMM
  • Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT41K1G4RH-125:E is as follows:

  1. VSS
  2. DQ0
  3. DQ1
  4. VSS
  5. DQ2
  6. DQ3
  7. VSS
  8. DQ4
  9. DQ5
  10. VSS
  11. DQ6
  12. DQ7
  13. VSS
  14. DQ8
  15. DQ9
  16. VSS
  17. DQ10
  18. DQ11
  19. VSS
  20. DQ12
  21. DQ13
  22. VSS
  23. DQ14
  24. DQ15
  25. VSS
  26. NC
  27. NC
  28. VSS
  29. A0
  30. A1
  31. VSS
  32. A2
  33. A3
  34. VSS
  35. A4
  36. A5
  37. VSS
  38. A6
  39. A7
  40. VSS
  41. A8
  42. A9
  43. VSS
  44. A10
  45. A11
  46. VSS
  47. A12
  48. A13
  49. VSS
  50. A14
  51. A15
  52. VSS
  53. BA0
  54. BA1
  55. VSS
  56. RAS#
  57. CAS#
  58. WE#
  59. VSS
  60. CK
  61. CKE
  62. CS#
  63. VSS
  64. DM0

Functional Features

  • High-speed data transfer
  • Error correction capabilities
  • Auto-refresh and self-refresh modes
  • On-die termination (ODT) for improved signal integrity
  • Burst mode operation for efficient data access

Advantages and Disadvantages

Advantages

  • Fast and reliable performance
  • Low power consumption
  • Compact form factor
  • Error correction capabilities enhance data integrity

Disadvantages

  • Limited storage capacity compared to other memory technologies
  • Higher cost per gigabyte compared to other memory types

Working Principles

MT41K1G4RH-125:E operates based on the principles of DDR3 SDRAM technology. It stores data in a matrix of capacitors, which are organized into rows and columns. The stored data can be accessed and manipulated by the computer system through various read and write operations.

Detailed Application Field Plans

MT41K1G4RH-125:E is commonly used in the following application fields:

  1. Laptop computers
  2. Desktop computers
  3. Workstations
  4. Servers
  5. Networking equipment
  6. Embedded systems

Detailed and Complete Alternative Models

Some alternative models to MT41K1G4RH-125:E include:

  1. MT41K256M16HA-125:E
  2. MT41K512M8RH-125:E
  3. MT41K1G8RH-125:E
  4. MT41K2G4RH-125:E
  5. MT41K4G4RH-125:E

These models offer similar functionality and characteristics but may differ in terms of capacity and organization.

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Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem MT41K1G4RH-125:E w rozwiązaniach technicznych

1. What is the MT41K1G4RH-125:E?

The MT41K1G4RH-125:E is a specific type of memory module commonly used in technical solutions. It is a DDR3 SDRAM module with a capacity of 1 gigabit (Gb) and operates at a speed of 125 MHz.

2. What are the key features of the MT41K1G4RH-125:E?

Some key features of the MT41K1G4RH-125:E include its high-speed operation, low power consumption, and compatibility with various technical solutions. It also has a small form factor and supports error correction code (ECC) functionality.

3. What are the typical applications of the MT41K1G4RH-125:E?

The MT41K1G4RH-125:E is commonly used in a wide range of technical solutions, including servers, workstations, networking equipment, industrial automation systems, and embedded systems. It can also be found in some consumer electronics devices.

4. What is the voltage requirement for the MT41K1G4RH-125:E?

The MT41K1G4RH-125:E operates at a voltage of 1.35V, which makes it suitable for low-power applications. However, it is also backward compatible with 1.5V systems.

5. Can the MT41K1G4RH-125:E be used as a standalone memory module?

No, the MT41K1G4RH-125:E is not designed to be used as a standalone memory module. It needs to be integrated into a larger system or motherboard that supports DDR3 SDRAM modules.

6. What is the maximum data transfer rate supported by the MT41K1G4RH-125:E?

The MT41K1G4RH-125:E supports a maximum data transfer rate of 10.0 gigabits per second (Gbps). This high-speed operation allows for efficient data processing in technical solutions.

7. Does the MT41K1G4RH-125:E support ECC functionality?

Yes, the MT41K1G4RH-125:E supports error correction code (ECC) functionality. This feature helps to detect and correct errors in data transmission, ensuring data integrity and system reliability.

8. Can the MT41K1G4RH-125:E be used in both single-channel and dual-channel configurations?

Yes, the MT41K1G4RH-125:E can be used in both single-channel and dual-channel memory configurations. The choice depends on the specific requirements of the technical solution and the capabilities of the system or motherboard.

9. What is the operating temperature range of the MT41K1G4RH-125:E?

The MT41K1G4RH-125:E has an operating temperature range of -40°C to +85°C. This wide temperature range allows it to be used in various environments, including industrial and automotive applications.

10. Is the MT41K1G4RH-125:E a reliable memory module?

Yes, the MT41K1G4RH-125:E is known for its reliability. It is manufactured by reputable companies and undergoes rigorous testing to ensure quality and performance. Additionally, its ECC functionality helps to enhance data integrity and system stability.