MT41J1G4THD-15E:D

Product Overview

Category

MT41J1G4THD-15E:D belongs to the category of semiconductor memory devices.

Use

It is primarily used as a dynamic random-access memory (DRAM) module in various electronic devices such as computers, servers, and mobile devices.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

MT41J1G4THD-15E:D is packaged in a small outline dual in-line memory module (SODIMM) format. This compact package allows for easy integration into space-constrained devices.

Essence

The essence of MT41J1G4THD-15E:D lies in its ability to provide fast and efficient data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

Typically, MT41J1G4THD-15E:D is available in individual packages. The quantity per package may vary depending on the manufacturer or supplier.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 1GB
• Speed: 1600MHz
• Voltage: 1.5V
• Data Width: x4
• Organization: 128M words x 4 bits
• Refresh: Auto-refresh and self-refresh modes supported
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT41J1G4THD-15E:D is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VDD | Power Supply Voltage | | 2 | DQ0 | Data Input/Output Bit 0 | | 3 | DQ1 | Data Input/Output Bit 1 | | ... | ... | ... | | 68 | VSS | Ground |

Functional Features

• High-speed data transfer
• Error correction capabilities
• On-die termination (ODT) for improved signal integrity
• Burst mode operation for efficient data access
• Low power consumption in standby mode

Advantages and Disadvantages

Advantages

• Fast and efficient data storage and retrieval
• Compact package size for easy integration
• Reliable performance and durability
• Low power consumption
• Error correction capabilities enhance data integrity

Disadvantages

• Limited capacity compared to other memory technologies
• Relatively higher cost per unit of storage compared to alternative memory options

Working Principles

MT41J1G4THD-15E:D operates based on the principles of dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data needs to be periodically refreshed to maintain its integrity.

When a read or write operation is initiated, the memory controller sends the appropriate signals to access the desired location in the memory array. The data is then transferred between the memory module and the controller through the data bus.

Detailed Application Field Plans

MT41J1G4THD-15E:D finds applications in various electronic devices, including but not limited to: - Laptops and notebooks - Desktop computers - Servers - Mobile devices such as smartphones and tablets - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT41J1G4THD-15E:D include: - MT41K256M16HA-125:E - MT41K512M16HA-125:E - MT41K1G8SN-125:E - MT41K2G8SN-125:E

These alternative models offer different capacities, speeds, and other specifications to cater to specific requirements.

In conclusion, MT41J1G4THD-15E:D is a DDR3 SDRAM memory module that provides high-speed data storage and retrieval capabilities. Its compact package size, low power consumption, and reliable performance make it suitable for various electronic devices. While it has limitations in terms of capacity and cost, it offers advantages such as error correction capabilities and efficient data access.