MT29F2G08ABAEAH4-ITX:E

Product Overview

Category

MT29F2G08ABAEAH4-ITX:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F2G08ABAEAH4-ITX:E offers a storage capacity of 2 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with low power consumption.
• Compact package: The product comes in a small form factor, making it suitable for space-constrained applications.
• Durable design: It is designed to withstand shock, vibration, and extreme temperature conditions.

Package and Quantity

MT29F2G08ABAEAH4-ITX:E is available in a surface-mount package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 2 GB
• Interface: NAND
• Supply Voltage: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 Mbps
• Package Type: Surface Mount

Detailed Pin Configuration

The pin configuration of MT29F2G08ABAEAH4-ITX:E is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip enable
4. RE - Read enable
5. WE - Write enable
6. A0-A18 - Address inputs
7. DQ0-DQ15 - Data input/output
8. R/B - Ready/Busy status
9. CLE - Command latch enable
10. ALE - Address latch enable

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data at the block level, improving efficiency.
• Random Access: Provides quick access to specific data within the memory.
• Wear-Leveling: Distributes write operations evenly across memory blocks, extending the product's lifespan.
• Error Correction Code (ECC): Implements error correction techniques to ensure data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Compact package size enables integration into various devices.
• Reliable performance with low power consumption.
• Durable design withstands harsh environmental conditions.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles.
• Relatively higher cost compared to other types of memory.
• Susceptible to data loss if not properly managed or protected.

Working Principles

MT29F2G08ABAEAH4-ITX:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The presence or absence of charge determines the binary state of each memory cell.

To read data, the controller sends an address to select the desired memory cell. The charge on the floating gate is then measured, allowing the retrieval of stored data. Writing data involves applying a high voltage to the control gate, which modifies the charge on the floating gate.

Detailed Application Field Plans

MT29F2G08ABAEAH4-ITX:E finds application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models to MT29F2G08ABAEAH4-ITX:E are: - MT29F2G08ABBEAH4-ITX:E - MT29F2G08ABCEAH4-ITX:E - MT29F2G08ABDEAH4-ITX:E - MT29F2G08ABEEAH4-ITX:E

These models offer similar specifications and functionality, providing flexibility for different design requirements.

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