MT28F400B5WG-8 B TR

Product Overview

Category

MT28F400B5WG-8 B TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is disconnected.
• High-speed read and write operations: Enables quick access to data.
• Compact size: Allows for integration into small electronic devices.
• Durable: Can withstand harsh environmental conditions.
• Low power consumption: Helps conserve battery life in portable devices.

Package

MT28F400B5WG-8 B TR is available in a surface-mount package, which facilitates easy installation on printed circuit boards (PCBs).

Essence

The essence of this product lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

MT28F400B5WG-8 B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 4 gigabits (512 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: 80 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years

Detailed Pin Configuration

The pin configuration of MT28F400B5WG-8 B TR is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RE#: Read enable
8. WP#: Write protect
9. RY/BY#: Ready/Busy status
10. VSS: Ground

Functional Features

• Erase and Program Operations: Allows for data modification and deletion.
• Block Architecture: Enables efficient management of memory blocks for improved performance.
• Error Correction Code (ECC): Enhances data integrity by detecting and correcting errors during read and write operations.
• Wear-Leveling Algorithm: Distributes data evenly across memory cells to prevent premature wear-out.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Compact size
• Durable and reliable
• Low power consumption

Disadvantages

• Limited number of erase/write cycles
• Relatively higher cost compared to other types of memory

Working Principles

MT28F400B5WG-8 B TR utilizes a floating-gate transistor technology called NAND flash memory. It stores data by trapping electric charges in the floating gate, which alters the threshold voltage of the transistor. This change in threshold voltage is used to represent binary data (0s and 1s). The data can be read, written, or erased using specific electrical signals applied to the memory cells.

Detailed Application Field Plans

MT28F400B5WG-8 B TR finds applications in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Mobile Devices: Smartphones, tablets, and portable media players.
2. Digital Cameras: Used for storing photos and videos.
3. Automotive Electronics: Infotainment systems, navigation systems, and instrument clusters.
4. Industrial Control Systems: Data logging, firmware storage, and configuration storage.
5. Consumer Electronics: MP3 players, e-readers, and gaming consoles.

Detailed and Complete Alternative Models

1. MT28F400B5WG-8 B TR: The model described in this entry.
2. MT28F400B3WG-8 B TR: Similar flash memory with a lower capacity of 3 gigabits (384 megabytes).
3. MT28F400B6WG-8 B TR: Similar flash memory with a higher capacity of 6 gigabits (768 megabytes).

These alternative models offer different storage capacities to cater to various application requirements.

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