MT28F400B3WG-8 B TR

Product Overview

Category

The MT28F400B3WG-8 B TR belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The MT28F400B3WG-8 B TR retains stored data even when power is turned off.
• High capacity: It offers a storage capacity of 4 gigabits (512 megabytes).
• Fast data transfer: The device supports high-speed data transfer rates, enabling quick access to stored information.
• Reliable performance: It has a robust design that ensures data integrity and durability.
• Low power consumption: The MT28F400B3WG-8 B TR is designed to minimize power consumption, making it suitable for battery-powered devices.

Package and Quantity

The MT28F400B3WG-8 B TR is available in a surface-mount package. The exact package dimensions and pin configuration are provided below. The product is typically sold in reels or trays containing multiple units.

Specifications

• Memory Type: Flash memory
• Capacity: 4 gigabits (512 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second
• Erase/Program Cycles: 100,000 cycles

Pin Configuration

The detailed pin configuration of the MT28F400B3WG-8 B TR is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A18 | Address inputs | | 3 | DQ0-DQ15 | Data input/output | | 4 | WE# | Write enable control | | 5 | CE# | Chip enable control | | 6 | OE# | Output enable control | | 7 | RE# | Read enable control | | 8 | WP# | Write protect control | | 9 | RY/BY# | Ready/busy status output | | 10 | VSS | Ground |

Note: The pin configuration may vary depending on the package type.

Functional Features

• Block Erase: The MT28F400B3WG-8 B TR supports block erase operations, allowing for efficient management of data storage.
• Page Program: It enables fast and flexible programming of data in individual memory pages.
• Error Correction Code (ECC): This feature ensures data integrity by detecting and correcting errors during read and write operations.
• Wear-Leveling: The device incorporates wear-leveling algorithms to evenly distribute write and erase cycles across memory blocks, extending its lifespan.
• Security Features: The MT28F400B3WG-8 B TR includes various security features such as password protection and lock/unlock commands to safeguard stored data.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Reliable performance and durability
• Support for security features

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited number of erase/program cycles

Working Principles

The MT28F400B3WG-8 B TR utilizes a floating-gate transistor technology to store data. It employs a combination of electric fields and charge trapping mechanisms to retain information even when power is removed. During programming, charges are injected into the floating gate, altering its electrical characteristics. Erasing is achieved by removing these charges from the floating gate.

Detailed Application Field Plans

The MT28F400B3WG-8 B TR is widely used in various applications, including: 1. Smartphones and tablets for storing operating systems, applications, and user data. 2. Digital cameras and camcorders for capturing and storing high-resolution photos and videos. 3. Portable media players for storing and playing multimedia content. 4. Automotive electronics for data storage in infotainment systems and navigation devices. 5. Industrial control systems for storing firmware and configuration data.

Alternative Models

For users seeking alternative options, the following flash memory devices can be considered: 1. MT29F4G08ABAEAWP: A 4-gigabit NAND flash memory with similar specifications and features. 2. S25FL512SAGMFI001: A 512-megabyte NOR flash memory offering fast read and write speeds. 3. W25Q256JVSIQ: A 256-megabit serial flash memory with a small form factor and low power consumption.

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