MT25TL512BAA1ESF-0AAT TR

Product Overview

Category

MT25TL512BAA1ESF-0AAT TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and embedded systems.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is turned off.
• High capacity: The MT25TL512BAA1ESF-0AAT TR offers a storage capacity of 512 megabits (64 megabytes).
• Fast access time: It provides quick read and write operations, allowing for efficient data transfer.
• Reliable: This memory device has a high endurance and can withstand numerous read/write cycles without degradation.
• Compact package: The MT25TL512BAA1ESF-0AAT TR comes in a small form factor, making it suitable for space-constrained applications.
• RoHS compliant: It adheres to the Restriction of Hazardous Substances directive, ensuring environmental friendliness.

Package and Quantity

The MT25TL512BAA1ESF-0AAT TR is available in a surface-mount package. Each package contains one memory device.

Specifications

• Memory Type: NOR Flash
• Interface: Serial Peripheral Interface (SPI)
• Organization: 512 Mbit (64 Mbyte)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Program Cycle Endurance: 100,000 cycles

Detailed Pin Configuration

The MT25TL512BAA1ESF-0AAT TR has the following pin configuration:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | CS# | Chip Select (active low) | | 2 | SCK | Serial Clock | | 3 | SI | Serial Input | | 4 | SO | Serial Output | | 5 | WP# | Write Protect (active low) | | 6 | HOLD# | Hold (active low) | | 7 | VCC | Power Supply | | 8 | GND | Ground |

Functional Features

• Fast Read/Write Operations: The MT25TL512BAA1ESF-0AAT TR offers high-speed data transfer, enabling quick access to stored information.
• Sector Erase and Program: It supports sector-based erase and program operations, allowing for efficient management of data.
• Protection Mechanisms: This memory device includes hardware and software protection features to prevent unauthorized access or modification of data.
• Low Power Consumption: The MT25TL512BAA1ESF-0AAT TR is designed to minimize power consumption, making it suitable for battery-powered devices.
• Error Correction Code (ECC): It incorporates ECC algorithms to ensure data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read/write operations
• Compact form factor
• Reliable and durable
• RoHS compliant

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited write endurance compared to some other non-volatile memory types

Working Principles

The MT25TL512BAA1ESF-0AAT TR utilizes NOR flash memory technology. It stores data in a grid of memory cells, where each cell represents a bit. These cells are organized into sectors, which can be individually erased and programmed. When reading data, the memory controller sends commands to the device, and the stored information is retrieved through the serial interface. During write operations, the controller sends data to be programmed into the memory cells.

Detailed Application Field Plans

The MT25TL512BAA1ESF-0AAT TR can be used in various applications, including: - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems - Networking equipment - Consumer electronics

Alternative Models

Other alternative models that offer similar functionality to the MT25TL512BAA1ESF-0AAT TR include: - MT25QL512ABA1EW7-0SIT - S25FL512SAGMFI011 - W25Q512JVSIQ

These models have comparable specifications and can be considered as alternatives based on specific requirements and availability.

In conclusion, the MT25TL512BAA1ESF-0AAT TR is a non-volatile memory device with high capacity, fast access time, and reliable performance. It finds applications in various electronic devices and offers advantages such as compact size and RoHS compliance. However, it has some limitations in terms