M29W400DB55N6

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: Non-volatile, high-density, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Stores digital information using floating-gate transistors
• Packaging/Quantity: Typically sold in trays or reels containing multiple units

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 55 ns
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Pin Configuration

The M29W400DB55N6 has the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VSS (Ground)
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. VCC (Power)
19. DQ0
20. DQ1
21. DQ2
22. DQ3
23. DQ4
24. DQ5
25. DQ6
26. DQ7
27. WE# (Write Enable)
28. CE# (Chip Enable)
29. OE# (Output Enable)
30. RESET#
31. RP (Ready/Busy)
32. NC (No Connection)

Functional Features

• High-speed data transfer
• Low power consumption
• Erase and program operations at the byte level
• Automatic sleep mode for power saving
• Hardware and software write protection options

Advantages

• High storage capacity in a compact form factor
• Fast read/write speeds for efficient data access
• Low power consumption for extended battery life
• Flexible interface for easy integration into various systems
• Reliable and durable non-volatile memory technology

Disadvantages

• Limited erase and program cycles (typical for flash memory)
• Higher cost compared to traditional magnetic storage media
• Susceptible to data loss in case of power failure during write operations

Working Principles

The M29W400DB55N6 utilizes floating-gate transistors to store digital information. These transistors can trap or release electric charge, representing binary states (0 or 1). The memory cells are organized in a grid-like structure, with each cell storing one bit of data. To read from or write to a specific memory location, the appropriate address is provided along with control signals.

Detailed Application Field Plans

The M29W400DB55N6 is commonly used in various electronic devices that require non-volatile data storage, such as:

1. Embedded systems
2. Consumer electronics (e.g., digital cameras, MP3 players)
3. Communication devices (e.g., routers, modems)
4. Automotive electronics
5. Industrial control systems

Alternative Models

Other flash memory models that can be considered as alternatives to the M29W400DB55N6 include:

1. M29W800DB70N6 - 8 Megabit Flash Memory
2. M29W160EB90N6 - 16 Megabit Flash Memory
3. M29W320GB70N6 - 32 Megabit Flash Memory
4. M29W640GL70N6 - 64 Megabit Flash Memory

These alternative models offer varying capacities and performance characteristics to suit different application requirements.

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