M29W128GH7AN6E

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-density storage capacity
  • Fast read and write speeds
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Provides reliable and efficient data storage solution for various electronic devices
• Packaging/Quantity: Available in different packaging options, such as surface mount packages, with varying quantities per package.

Specifications

• Memory Type: NOR Flash
• Density: 128 Megabits (16 Megabytes)
• Organization: 16 Mbit x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (max)
• Page Size: 256 bytes
• Block Erase Size: 64 Kbytes
• Write Endurance: 100,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The M29W128GH7AN6E flash memory IC has the following pin configuration:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. DQ0-DQ7 - Data input/output
5. WE# - Write enable
6. CE# - Chip enable
7. OE# - Output enable
8. RP# - Reset/Protection
9. RY/BY# - Ready/Busy status
10. WP#/ACC - Write protect or accelerated programming control
11. BYTE# - Byte/Word organization selection
12. A19-A21 - Additional address inputs
13. A22 - Address input
14. A23 - Address input
15. A24 - Address input
16. A25 - Address input
17. A26 - Address input
18. A27 - Address input
19. A28 - Address input
20. A29 - Address input

Functional Features

• High-speed read and write operations
• Efficient block erase capability
• Reliable data retention
• Low power consumption during standby mode
• Protection features to prevent accidental writes or unauthorized access
• Ready/Busy status indication for easy integration into systems

Advantages and Disadvantages

Advantages: - High-density storage capacity - Fast read and write speeds - Low power consumption - Reliable data retention - Protection features for data security

Disadvantages: - Limited write endurance (100,000 cycles) - Requires external programming voltage for initial setup

Working Principles

The M29W128GH7AN6E flash memory operates based on the NOR architecture. It uses a grid of floating-gate transistors to store data. When writing data, the memory cells are programmed by trapping electrons in the floating gate, altering the threshold voltage of the transistor. Reading data involves sensing the voltage level of the memory cell to determine the stored data.

Detailed Application Field Plans

The M29W128GH7AN6E flash memory is widely used in various electronic devices, including but not limited to: - Mobile phones - Tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Alternative Models

Here are some alternative models that offer similar functionality to the M29W128GH7AN6E flash memory:

1. M29W128GL7AN6E
2. M29W128GT7AN6E
3. M29W128GX7AN6E
4. M29W128GB7AN6E

These models have comparable specifications and can be considered as alternatives based on specific requirements and availability.

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