M29F800FT55N3E2

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile Memory
• Characteristics: High-density, Flash memory
• Package: 48-pin TSOP (Thin Small Outline Package)
• Essence: Stores data even when power is turned off
• Packaging/Quantity: Tray packaging, quantity varies

Specifications

• Manufacturer: STMicroelectronics
• Memory Type: NOR Flash
• Memory Size: 8 Megabits (1 Megabyte)
• Access Time: 55 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The M29F800FT55N3E2 has a 48-pin TSOP package with the following pin configuration:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | A0 | Address Input | | 2 | A1 | Address Input | | 3 | A2 | Address Input | | ... | ... | ... | | 46 | VCC | Power Supply (3.3V) | | 47 | GND | Ground | | 48 | WE# | Write Enable |

Note: The table above shows only a portion of the pin configuration for brevity.

Functional Features

• Non-volatile memory retains data without power supply
• High-density storage capacity of 8 Megabits
• Fast access time of 55 nanoseconds
• Reliable operation in a wide temperature range (-40°C to +85°C)
• Supports 100,000 erase/program cycles

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data persistence - High-density storage capacity - Fast access time for efficient data retrieval - Wide operating temperature range allows for various applications

Disadvantages: - Limited erase/program cycles compared to some newer memory technologies - Relatively higher power consumption compared to certain low-power memory options

Working Principles

The M29F800FT55N3E2 is based on NOR Flash memory technology. It utilizes a grid of memory cells, where each cell consists of a floating-gate transistor. The presence or absence of an electrical charge on the floating gate determines the stored data (0 or 1). The memory can be erased and reprogrammed by applying specific voltage levels to the control pins.

Detailed Application Field Plans

The M29F800FT55N3E2 is commonly used in various electronic devices that require non-volatile memory for data storage. Some typical application fields include: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• M29F800FB5AN6E2: Same memory size and characteristics, different package (48-pin FBGA)
• M29F800FT70N6E2: Same memory size, higher access time (70 nanoseconds), different package (48-pin TSOP)

Note: The above alternative models are provided as examples and may not represent an exhaustive list.

This entry provides an overview of the M29F800FT55N3E2, a high-density NOR Flash memory IC. Its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models are discussed.