M29F800FB5AN6E2

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-density storage capacity
  • Fast read and write speeds
  • Low power consumption
• Package: SOP44 (Small Outline Package)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, with a quantity of 2500 units per reel

Specifications

• Memory Type: NOR Flash
• Density: 8 Megabits (1 Megabyte)
• Organization: 1M x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (Max)
• Page Size: 256 bytes
• Sector Size: 64 Kbytes
• Programming Time: 10 µs (Typical)
• Erasing Time: 10 ms (Typical)

Detailed Pin Configuration

The M29F800FB5AN6E2 flash memory chip has the following pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. A16 - Address Input
18. A17 - Address Input
19. A18 - Address Input
20. A19 - Address Input
21. A20 - Address Input
22. A21 - Address Input
23. A22 - Address Input
24. A23 - Address Input
25. A24 - Address Input
26. A25 - Address Input
27. ALE - Address Latch Enable
28. CE - Chip Enable
29. CLE - Command Latch Enable
30. WE - Write Enable
31. OE - Output Enable
32. BYTE# - Byte Selection
33. DQ0 - Data Input/Output
34. DQ1 - Data Input/Output
35. DQ2 - Data Input/Output
36. DQ3 - Data Input/Output
37. DQ4 - Data Input/Output
38. DQ5 - Data Input/Output
39. DQ6 - Data Input/Output
40. DQ7 - Data Input/Output
41. VCC - Power Supply
42. GND - Ground

Functional Features

• High-speed data transfer with fast access times
• Reliable and durable non-volatile memory technology
• Low power consumption for energy-efficient operation
• Easy integration into various electronic devices
• Efficient programming and erasing capabilities
• Compatibility with parallel interface systems

Advantages and Disadvantages

Advantages: - High-density storage capacity - Fast read and write speeds - Low power consumption - Reliable and durable - Easy integration

Disadvantages: - Limited storage capacity compared to newer flash memory technologies - Parallel interface may limit compatibility with certain systems

Working Principles

The M29F800FB5AN6E2 flash memory operates based on the principles of NOR flash technology. It utilizes a parallel interface to transfer data between the memory chip and the host device. The memory cells store data in a non-volatile manner, meaning the stored information is retained even when power is removed. The chip supports fast read and write operations, allowing for efficient data storage and retrieval.

Detailed Application Field Plans

The M29F800FB5AN6E2 flash memory chip finds applications in various electronic devices that require reliable and high-density data storage. Some potential application fields include:

1. Consumer Electronics:

   • Digital cameras
   • Set-top boxes
   • Portable media players

2. Automotive Systems:

   • Infotainment systems
   • Instrument clusters
   • Navigation systems

3. Industrial Equipment:

   • Data loggers
   • Control systems
   • Measurement devices

4. Communication Devices:

   • Routers
   • Switches
   • Network storage devices

Detailed and Complete Alternative Models

1. M29F800FTB5AN6E2
   • Similar specifications and features as M29F800FB5AN6