M29F800DB70N6

Product Overview

Category

M29F800DB70N6 belongs to the category of Flash Memory.

Use

It is primarily used for data storage and retrieval in electronic devices.

Characteristics

• Non-volatile memory
• High-speed read and write operations
• Low power consumption
• Large storage capacity
• Durable and reliable

Package

M29F800DB70N6 is available in a compact package that ensures easy integration into various electronic systems.

Essence

The essence of M29F800DB70N6 lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of M29F800DB70N6 units.

Specifications

• Memory Size: 8 Megabits (1 Megabyte)
• Organization: 1M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Erase/Program Suspend: Yes
• Data Retention: 20 years

Detailed Pin Configuration

The pin configuration of M29F800DB70N6 is as follows:

1. VCC: Power supply voltage
2. A0-A19: Address inputs
3. DQ0-DQ7: Data input/output
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RP#/BYTE#: Reset/byte select
8. RY/BY#: Ready/busy status
9. VSS: Ground

Functional Features

• Fast read and write operations
• Easy integration into existing systems
• Reliable data retention
• Low power consumption
• Erase and program suspend capability

Advantages and Disadvantages

Advantages

• High-speed data access
• Large storage capacity
• Durable and reliable
• Low power consumption

Disadvantages

• Limited write endurance
• Higher cost compared to other memory technologies

Working Principles

M29F800DB70N6 utilizes a floating gate transistor technology to store digital information. It uses electrical charges to represent binary data, with the presence or absence of charge indicating the value of each bit.

During programming, the memory cells are subjected to high voltages, which trap charges in the floating gate. These trapped charges alter the threshold voltage of the transistor, allowing it to retain the programmed state even when power is removed.

During read operations, the stored charges are detected by sensing the transistor's threshold voltage. This allows for fast and accurate retrieval of the stored data.

Detailed Application Field Plans

M29F800DB70N6 finds applications in various electronic devices, including but not limited to: - Personal computers - Mobile phones - Digital cameras - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to M29F800DB70N6 include: - M29F800FB5AN6E - M29F800FT5AN6E - M29F800AB5AN6E - M29F800AT5AN6E

These models provide comparable specifications and can be used as alternatives based on specific requirements.

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