Micron Technology Inc.
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M28W640HCB70N6E
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M28W640HCB70N6E

Product Overview

Category

M28W640HCB70N6E belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

  • Non-volatile: The M28W640HCB70N6E retains stored data even when power is removed.
  • High capacity: With a capacity of 64 megabits (8 megabytes), it offers ample storage space.
  • High-speed operation: The device allows for fast read and write operations, enhancing overall system performance.

Package

The M28W640HCB70N6E is available in a compact surface-mount package, making it suitable for integration into small form factor devices.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

The M28W640HCB70N6E is typically packaged in reels or trays, with each reel containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: Flash
  • Capacity: 64 Megabits (8 Megabytes)
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: TSOP48

Detailed Pin Configuration

The M28W640HCB70N6E features a TSOP48 package with the following pin configuration:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. BYTE#
  35. WE#
  36. CE#
  37. OE#
  38. I/O0
  39. I/O1
  40. I/O2
  41. I/O3
  42. I/O4
  43. I/O5
  44. I/O6
  45. I/O7
  46. RY/BY#
  47. VSS
  48. NC

Functional Features

  • Fast Read and Write Operations: The M28W640HCB70N6E offers high-speed data transfer, enabling quick access to stored information.
  • Sector Erase Capability: It allows for erasing specific sectors of memory, facilitating efficient data management.
  • Low Power Consumption: The device is designed to minimize power consumption, making it suitable for battery-powered devices.
  • Data Protection: The M28W640HCB70N6E incorporates various mechanisms to ensure data integrity and prevent unauthorized access.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast read and write operations
  • Compact package size
  • Low power consumption

Disadvantages

  • Limited endurance (limited number of erase/write cycles)
  • Relatively higher cost compared to other memory technologies

Working Principles

The M28W640HCB70N6E utilizes flash memory technology to store data. It consists of a grid of memory cells, with each cell capable of storing multiple bits of information. The device uses electrical charges to represent data, and these charges can be read, written, or erased as needed.

Detailed Application Field Plans

The M28W640HCB70N6E finds applications in various electronic devices, including but not limited to: - Computers and laptops - Smartphones and tablets - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

  • M28W640FSB70N6E
  • M28W640FST70N6E
  • M28W640FSU70N6E
  • M28W640FSB70ZB6E
  • M28W640FST70ZB6E
  • M28W640FSU70ZB6E

These alternative models offer similar specifications and functionality to the M28W640HCB70N6E, providing flexibility for different design requirements.

In conclusion, the M28W640HCB70N6E is a high-capacity non

Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem M28W640HCB70N6E w rozwiązaniach technicznych

Sure! Here are 10 common questions and answers related to the application of M28W640HCB70N6E in technical solutions:

  1. Q: What is M28W640HCB70N6E? A: M28W640HCB70N6E is a specific model of flash memory chip manufactured by a company called STMicroelectronics.

  2. Q: What is the capacity of M28W640HCB70N6E? A: The M28W640HCB70N6E has a capacity of 64 megabits (8 megabytes).

  3. Q: What is the operating voltage range for M28W640HCB70N6E? A: The operating voltage range for M28W640HCB70N6E is typically between 2.7V and 3.6V.

  4. Q: What is the interface used to communicate with M28W640HCB70N6E? A: M28W640HCB70N6E uses a standard parallel interface for communication.

  5. Q: Can M28W640HCB70N6E be used in automotive applications? A: Yes, M28W640HCB70N6E is designed to meet the requirements of automotive applications.

  6. Q: Is M28W640HCB70N6E compatible with industrial temperature ranges? A: Yes, M28W640HCB70N6E is designed to operate within industrial temperature ranges (-40°C to +85°C).

  7. Q: Does M28W640HCB70N6E support hardware data protection features? A: Yes, M28W640HCB70N6E provides hardware-based write protection and block locking mechanisms.

  8. Q: Can M28W640HCB70N6E be used as a boot device in embedded systems? A: Yes, M28W640HCB70N6E can be used as a boot device due to its fast access times and reliable performance.

  9. Q: Does M28W640HCB70N6E support software and hardware data protection mechanisms? A: Yes, M28W640HCB70N6E supports both software and hardware-based data protection features.

  10. Q: What is the typical endurance of M28W640HCB70N6E? A: M28W640HCB70N6E has a typical endurance of 100,000 program/erase cycles per sector.

Please note that the answers provided here are general and may vary depending on specific implementation details and datasheet specifications.