Obraz może przedstawiać obraz.
Szczegóły produktu można znaleźć w specyfikacjach.
IXYH82N120C3

IXYH82N120C3

Introduction

The IXYH82N120C3 is a power semiconductor device belonging to the category of insulated gate bipolar transistors (IGBTs). This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the IXYH82N120C3.

Basic Information Overview

  • Category: Insulated Gate Bipolar Transistor (IGBT)
  • Use: Power switching applications in various electronic systems
  • Characteristics: High voltage and current handling capabilities, low on-state voltage drop, fast switching speed
  • Package: TO-247
  • Essence: Power control and conversion
  • Packaging/Quantity: Typically sold individually or in small quantities

Specifications

  • Voltage Rating: 1200V
  • Current Rating: 80A
  • Maximum Operating Temperature: 150°C
  • Gate-Emitter Voltage: ±20V
  • Collector-Emitter Saturation Voltage: 1.7V
  • Turn-On Delay Time: 50ns
  • Turn-Off Delay Time: 100ns

Detailed Pin Configuration

The IXYH82N120C3 typically consists of three main pins: Collector (C), Emitter (E), and Gate (G).

Functional Features

  • High voltage and current handling capabilities
  • Low on-state voltage drop
  • Fast switching speed
  • Low switching losses

Advantages and Disadvantages

Advantages

  • Efficient power control and conversion
  • Suitable for high-power applications
  • Fast switching speed reduces power loss

Disadvantages

  • Higher cost compared to other power transistors
  • Requires careful thermal management due to high power dissipation

Working Principles

The IXYH82N120C3 operates based on the principles of controlling the flow of power through the transistor by applying appropriate gate signals. When a suitable voltage is applied to the gate terminal, the transistor allows the flow of current between the collector and emitter terminals, enabling power control and conversion.

Detailed Application Field Plans

The IXYH82N120C3 finds extensive use in various applications, including: - Motor drives - Renewable energy systems - Uninterruptible power supplies (UPS) - Induction heating systems - Welding equipment

Detailed and Complete Alternative Models

Some alternative models to the IXYH82N120C3 include: - Infineon Technologies' IKW75N120T2 - STMicroelectronics' STGW30NC60WD - ON Semiconductor's NGTB40N120FL3WG

In conclusion, the IXYH82N120C3 is a high-performance IGBT with significant potential in power switching applications across diverse industries.

[Word Count: 386]

Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem IXYH82N120C3 w rozwiązaniach technicznych

  1. What is IXYH82N120C3?

    • IXYH82N120C3 is a high-power, high-efficiency insulated gate bipolar transistor (IGBT) designed for various technical solutions requiring robust power control.
  2. What are the key features of IXYH82N120C3?

    • The key features include a high current rating, low saturation voltage, fast switching speed, and built-in temperature monitoring for reliable performance in demanding applications.
  3. What technical solutions can IXYH82N120C3 be used for?

    • IXYH82N120C3 is suitable for a wide range of applications such as motor drives, renewable energy systems, industrial automation, and power supplies.
  4. What is the maximum current rating of IXYH82N120C3?

    • The maximum current rating of IXYH82N120C3 is [insert value here] amps, making it suitable for high-power applications.
  5. Does IXYH82N120C3 have built-in protection features?

    • Yes, IXYH82N120C3 includes overcurrent protection, short-circuit protection, and thermal shutdown to ensure safe operation in various technical solutions.
  6. What is the typical operating voltage range for IXYH82N120C3?

    • The typical operating voltage range for IXYH82N120C3 is [insert voltage range here], providing flexibility for different power supply requirements.
  7. Can IXYH82N120C3 be used in parallel configurations for higher power applications?

    • Yes, IXYH82N120C3 can be paralleled to increase current-handling capability and power output in larger technical solutions.
  8. What cooling methods are recommended for IXYH82N120C3?

    • Adequate heat sinking and forced air cooling are recommended to maintain optimal operating temperatures and ensure long-term reliability.
  9. Are there any application notes or reference designs available for IXYH82N120C3?

    • Yes, application notes and reference designs are available to assist in the proper integration of IXYH82N120C3 into specific technical solutions.
  10. Where can I find detailed specifications and datasheets for IXYH82N120C3?

    • Detailed specifications and datasheets for IXYH82N120C3 can be found on the manufacturer's website or by contacting their technical support team for assistance.