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IXTA50N20P
Product Overview
Category:
The IXTA50N20P belongs to the category of power MOSFETs.
Use:
It is used as a switching device in power supply applications, motor control, and other high-power electronic circuits.
Characteristics:
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package:
The IXTA50N20P is typically available in a TO-263 package.
Essence:
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity:
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 200V
- Continuous Drain Current (ID): 50A
- On-Resistance (RDS(on)): 0.04 ohms
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 80nC
- Operating Temperature: -55°C to 175°C
Detailed Pin Configuration
The IXTA50N20P typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power losses and improves efficiency.
- Fast switching speed enables rapid control of power flow.
Advantages
- Excellent high-voltage performance
- Low on-resistance for reduced power dissipation
- Fast switching speed for improved efficiency
Disadvantages
- Higher gate charge compared to some alternative models
- Sensitivity to static electricity requires careful handling during assembly
Working Principles
The IXTA50N20P operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IXTA50N20P is widely used in: - Switched-mode power supplies - Motor drives - Inverters - Power factor correction circuits
Detailed and Complete Alternative Models
Some alternative models to the IXTA50N20P include: - IRFP4568PbF - FDPF51N25 - STW45NM50FD
In conclusion, the IXTA50N20P power MOSFET offers high-voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management applications. Its characteristics and functional features make it an essential component in modern electronic systems.
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Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem IXTA50N20P w rozwiązaniach technicznych
What is the maximum drain-source voltage of IXTA50N20P?
- The maximum drain-source voltage of IXTA50N20P is 200V.
What is the continuous drain current rating of IXTA50N20P?
- The continuous drain current rating of IXTA50N20P is 50A.
What is the on-state resistance (RDS(on)) of IXTA50N20P?
- The on-state resistance (RDS(on)) of IXTA50N20P is typically 0.038 ohms.
What is the gate threshold voltage of IXTA50N20P?
- The gate threshold voltage of IXTA50N20P is typically 2.5V.
Can IXTA50N20P be used in high-frequency switching applications?
- Yes, IXTA50N20P is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
What are the typical applications for IXTA50N20P?
- Typical applications for IXTA50N20P include motor control, power supplies, inverters, and DC-DC converters.
Does IXTA50N20P require a heat sink for operation?
- It is recommended to use a heat sink when operating IXTA50N20P at high currents or in high ambient temperatures to ensure proper thermal management.
Is IXTA50N20P suitable for automotive applications?
- Yes, IXTA50N20P is designed to meet the requirements for automotive applications, including robustness and reliability.
What is the maximum junction temperature of IXTA50N20P?
- The maximum junction temperature of IXTA50N20P is 175°C.
Are there any specific considerations for driving the gate of IXTA50N20P?
- It is important to drive the gate of IXTA50N20P with appropriate voltage levels and to observe proper gate drive techniques to optimize performance and reliability.