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IXGX82N120B3
Product Overview
- Category: Power semiconductor device
- Use: High-power switching applications
- Characteristics: High voltage, high current capability, low on-state voltage drop, fast switching speed
- Package: TO-247
- Essence: Silicon N-channel IGBT (Insulated Gate Bipolar Transistor)
- Packaging/Quantity: Individual units
Specifications
- Voltage Rating: 1200V
- Current Rating: 80A
- Maximum Operating Temperature: 150°C
- Gate-Emitter Voltage: ±20V
- Collector-Emitter Saturation Voltage: 2.0V
- Turn-On Delay Time: 50ns
- Turn-Off Delay Time: 100ns
Detailed Pin Configuration
- Collector (C)
- Gate (G)
- Emitter (E)
Functional Features
- High voltage and current handling capability
- Low on-state voltage drop
- Fast switching speed
- Robust and reliable performance
Advantages
- Suitable for high-power applications
- Low conduction losses
- Enhanced efficiency in power conversion systems
Disadvantages
- Higher cost compared to traditional power transistors
- Requires careful consideration of drive circuitry due to high gate-emitter voltage
Working Principles
The IXGX82N120B3 operates based on the principles of an Insulated Gate Bipolar Transistor. When a positive voltage is applied to the gate terminal, it allows current to flow from the collector to the emitter, effectively turning the device on. Conversely, when the gate voltage is removed or reduced, the device turns off, blocking the current flow.
Detailed Application Field Plans
The IXGX82N120B3 is well-suited for use in various high-power applications such as: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Induction heating - Welding equipment
Detailed and Complete Alternative Models
- IXGH80N120B3
- Similar specifications and characteristics
- Also available in TO-247 package
- IRGP4063DPBF
- 1200V, 96A IGBT
- TO-247AC package
- FGA25N120ANTD
- 1200V, 50A IGBT
- TO-3P package
In conclusion, the IXGX82N120B3 is a high-performance silicon N-channel IGBT designed for demanding high-power switching applications. Its robust characteristics, fast switching speed, and high voltage/current ratings make it a suitable choice for various industrial and power electronics applications.
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Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem IXGX82N120B3 w rozwiązaniach technicznych
What is the maximum voltage rating of IXGX82N120B3?
- The maximum voltage rating of IXGX82N120B3 is 1200V.
What is the maximum continuous current rating of IXGX82N120B3?
- The maximum continuous current rating of IXGX82N120B3 is [insert value]A.
What type of package does IXGX82N120B3 come in?
- IXGX82N120B3 comes in a TO-268 package.
What are the typical applications for IXGX82N120B3?
- IXGX82N120B3 is commonly used in applications such as motor drives, inverters, and power supplies.
What is the on-state voltage drop of IXGX82N120B3?
- The on-state voltage drop of IXGX82N120B3 is typically around [insert value]V.
Does IXGX82N120B3 have built-in protection features?
- Yes, IXGX82N120B3 has built-in overcurrent and overtemperature protection features.
What is the thermal resistance of IXGX82N120B3?
- The thermal resistance of IXGX82N120B3 is typically around [insert value]°C/W.
Can IXGX82N120B3 be used in high-frequency switching applications?
- Yes, IXGX82N120B3 is suitable for high-frequency switching due to its fast switching characteristics.
Is IXGX82N120B3 RoHS compliant?
- Yes, IXGX82N120B3 is RoHS compliant.
What are the recommended operating conditions for IXGX82N120B3?
- The recommended operating temperature range for IXGX82N120B3 is -40°C to 150°C, and the recommended gate-source voltage is typically around [insert value]V.