IS66WVE4M16EALL-70BLI-TR

Product Overview

Category

IS66WVE4M16EALL-70BLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed performance
• Non-volatile memory
• Low power consumption
• Compact size
• Reliable data retention

Package

IS66WVE4M16EALL-70BLI-TR is available in a small form factor package, suitable for surface mount technology (SMT) applications.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

IS66WVE4M16EALL-70BLI-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: Non-volatile RAM
• Capacity: 4 megabits (4M)
• Organization: 16M x 16 bits
• Operating Voltage: 2.7V - 3.6V
• Speed: 70 nanoseconds (ns)
• Interface: Parallel
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS66WVE4M16EALL-70BLI-TR is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A20 - Address inputs
4. DQ0-DQ15 - Data input/output
5. WE - Write enable
6. OE - Output enable
7. CE - Chip enable
8. UB/LB - Upper byte/lower byte control
9. WP - Write protect
10. RY/BY - Ready/busy output

Functional Features

• High-speed access: The IS66WVE4M16EALL-70BLI-TR offers fast data access, enabling efficient read and write operations.
• Non-volatile storage: This memory retains data even when power is disconnected, ensuring data integrity.
• Low power consumption: The product is designed to minimize power usage, making it suitable for battery-powered devices.
• Reliable operation: With built-in error correction and detection mechanisms, the IS66WVE4M16EALL-70BLI-TR ensures reliable data storage.

Advantages and Disadvantages

Advantages

• Fast access times improve overall system performance.
• Non-volatile nature ensures data persistence.
• Low power consumption extends battery life in portable devices.
• Compact size allows for integration into small form factor designs.

Disadvantages

• Limited capacity compared to other memory technologies.
• Relatively higher cost per bit compared to some alternatives.
• Susceptible to physical damage if mishandled.

Working Principles

IS66WVE4M16EALL-70BLI-TR utilizes a combination of electronic circuits and semiconductor materials to store and retrieve digital information. It employs a parallel interface to communicate with the host device, allowing for high-speed data transfer.

The memory cells within the device use a floating gate transistor structure, which enables non-volatile storage. Data is written by applying appropriate voltages to the memory cells, altering the charge on the floating gate. Reading data involves sensing the charge state of the memory cells.

Detailed Application Field Plans

IS66WVE4M16EALL-70BLI-TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS66WVE4M16EALL-70BLI-TR include: - IS66WVE4M16EBLL-70BLI-TR - IS66WVE4M16EBLL-75BLI-TR - IS66WVE4M16EBLL-85BLI-TR - IS66WVE4M16EBLL-90BLI-TR

These models offer similar functionality and specifications, providing options for different application requirements.

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