IS61WV25616EDBLL-10BLI

Product Overview

Category

IS61WV25616EDBLL-10BLI belongs to the category of high-speed, low-power CMOS static random access memory (SRAM) chips.

Use

This product is primarily used in electronic devices that require fast and reliable data storage and retrieval. It is commonly found in applications such as computer systems, networking equipment, telecommunications devices, and consumer electronics.

Characteristics

• High-speed operation: The IS61WV25616EDBLL-10BLI offers fast access times, allowing for quick data read and write operations.
• Low power consumption: This SRAM chip is designed to minimize power usage, making it suitable for battery-powered devices.
• Large storage capacity: With a capacity of 256 kilobits (32 kilobytes), this chip can store a significant amount of data.
• Wide operating voltage range: The IS61WV25616EDBLL-10BLI can operate within a voltage range of 2.7V to 3.6V, providing flexibility in various electronic systems.
• Small form factor: The chip comes in a compact package, enabling space-efficient integration into electronic circuit boards.

Package and Quantity

The IS61WV25616EDBLL-10BLI is available in a Ball Grid Array (BGA) package. Each package contains one unit of the SRAM chip.

Specifications

• Organization: 32K words × 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 10 ns
• Standby Current: 5 μA (typical)
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA
• Pin Count: 48

Detailed Pin Configuration

The IS61WV25616EDBLL-10BLI has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /CE
19. /OE
20. WE
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. GND
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Random access: The SRAM chip allows for direct and random access to any memory location, enabling efficient data retrieval.
• Non-volatile storage: The stored data remains intact even when the power supply is disconnected, ensuring data persistence.
• High-speed operation: With an access time of 10 ns, this chip provides fast read and write operations, enhancing overall system performance.
• Low power consumption: The IS61WV25616EDBLL-10BLI is designed to minimize power usage, making it suitable for battery-powered devices.
• Easy integration: The compact package and standard pin configuration facilitate seamless integration into electronic circuit boards.

Advantages and Disadvantages

Advantages

• High-speed operation enables quick data access.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile storage ensures data persistence.
• Compact form factor allows for space-efficient integration.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit of storage compared to alternative memory options.

Working Principles

The IS61WV25616EDBLL-10BLI operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store each bit of data, allowing for fast read and write operations. The chip is organized into 32K words, with each word consisting of 8 bits. When a specific memory location is addressed, the corresponding data can be accessed directly without the need for sequential retrieval.

Detailed Application Field Plans

The IS61WV25616EDBLL-10BLI finds applications in various electronic devices and systems, including:

1. Computer systems: Used as cache memory or main memory in desktops, laptops, and servers.