IS43R32400E-5BLI-TR

Product Overview

Category

IS43R32400E-5BLI-TR belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for data storage and retrieval purposes.

Characteristics

• Integrated circuit type: Dynamic Random Access Memory (DRAM)
• Storage capacity: 4 Gigabits (Gb)
• Organization: 32 Megabytes (MB) x 16 bits
• Operating voltage: 1.7V - 1.95V
• Package type: Ball Grid Array (BGA)
• Package dimensions: 10mm x 13mm
• Temperature range: -40°C to +85°C

Packaging/Quantity

IS43R32400E-5BLI-TR is typically packaged in reels, with each reel containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory type: Synchronous DRAM (SDRAM)
• Clock frequency: Up to 400 MHz
• Data rate: 800 Mbps
• Interface: Double Data Rate (DDR)
• Burst length: 8 or 4
• Refresh mode: Auto-refresh and self-refresh
• CAS latency: 3, 4, 5, 6, or 7 cycles
• Power supply current: Varies based on operating conditions

Detailed Pin Configuration

The IS43R32400E-5BLI-TR IC has a total of 60 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. /RAS
20. /CAS
21. /WE
22. /CS
23. BA0
24. BA1
25. A0
26. A1
27. A2
28. A3
29. A4
30. A5
31. A6
32. A7
33. A8
34. A9
35. A10
36. A11
37. A12
38. A13
39. A14
40. A15
41. A16
42. A17
43. A18
44. A19
45. A20
46. A21
47. A22
48. VDD
49. VSS
50. CK
51. CKE
52. /CS
53. /CKE
54. /RESET
55. /ODT
56. VREF
57. VSS
58. VDD
59. VSS
60. VDD

Functional Features

• High-speed data transfer with a clock frequency of up to 400 MHz.
• Efficient memory organization allowing for quick access and retrieval of data.
• Low power consumption in both active and standby modes.
• Auto-refresh and self-refresh modes for maintaining data integrity during power fluctuations.
• Double Data Rate (DDR) interface for improved data transfer rates.

Advantages and Disadvantages

Advantages

• High-speed performance enables faster data processing.
• Efficient memory organization allows for optimal data storage and retrieval.
• Low power consumption helps prolong battery life in portable devices.
• Auto-refresh and self-refresh modes ensure data integrity during power fluctuations.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Sensitive to electrical noise, requiring proper shielding and grounding measures.
• Higher cost compared to some alternative memory solutions.

Working Principles

IS43R32400E-5BLI-TR operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. The IC utilizes a synchronous interface and employs clock signals to synchronize data transfers between the memory and the host device.

Detailed Application Field Plans

IS43R32400E-5BLI-TR finds applications in various electronic devices that require high-speed data storage and retrieval capabilities. Some potential application fields include:

1. Personal computers and laptops
2. Mobile phones and tablets
3. Gaming consoles
4. Networking equipment
5. Automotive electronics
6. Industrial control systems
7. Medical devices

Detailed and Complete Alternative Models

1. IS43R32800E-5BLI-TR: 8 Gigabit (