IS42S81600F-6TLI

Product Overview

Category

IS42S81600F-6TLI belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Low power consumption
• Compact package size
• Wide temperature range operation
• Reliable performance

Package

IS42S81600F-6TLI is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S81600F-6TLI lies in its ability to provide fast and efficient data storage and retrieval, making it an essential component in modern electronic devices.

Packaging/Quantity

IS42S81600F-6TLI is typically packaged in trays or reels, with each tray or reel containing a specific quantity of modules. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 128 Megabytes (MB)
• Organization: 8 Megabits x 16 bits
• Speed: 6 nanoseconds (ns)
• Voltage Supply: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S81600F-6TLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS0
40. /CS1
41. /CS2
42. /CS3
43. /CKE
44. /CLK
45. /DQM0
46. /DQM1
47. /DQS0
48. /DQS1

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable burst length and latency settings
• Easy integration with various memory controllers

Advantages and Disadvantages

Advantages

• Fast data transfer rate enhances overall system performance
• Low power consumption prolongs battery life in portable devices
• Compact package size allows for space-efficient designs
• Wide temperature range operation ensures reliability in different environments

Disadvantages

• Limited capacity compared to higher-end memory modules
• Higher cost per unit of storage compared to other memory technologies
• Requires proper handling and installation to prevent damage

Working Principles

IS42S81600F-6TLI operates based on the principles of synchronous dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The data is accessed by sending specific commands and addresses to the module, which activates the appropriate row and column to read or write data.

Detailed Application Field Plans

IS42S81600F-6TLI finds extensive use in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Workstations - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS42S81600F-6TLI include: - MT48LC16M16A2P-75: Micron Technology Inc. - K4S561632H-UC60: Samsung Electronics Co., Ltd. - HYB39S256160FE-7: Infineon Technologies AG - M5M5256DFP-70LL: Renesas Electronics Corporation - AS4C32M16SB-7TCN: Alliance Memory Inc.

These alternative models offer similar functionality and can be used