IS42S16160G-7TLI

Product Overview

Category

IS42S16160G-7TLI belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in electronic devices such as computers, laptops, servers, and other computing systems that require high-speed data storage and retrieval.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Package

IS42S16160G-7TLI is available in a small outline dual in-line memory module (SO-DIMM) package.

Essence

The essence of IS42S16160G-7TLI lies in its ability to provide fast and efficient data storage and retrieval for various computing applications.

Packaging/Quantity

IS42S16160G-7TLI is typically packaged individually and is available in varying quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Memory Size: 16 Megabytes (MB)
• Organization: 1M words x 16 bits
• Operating Voltage: 3.3 Volts (V)
• Speed Grade: 7
• Interface: Parallel
• Clock Frequency: 143 MHz
• Refresh Rate: 8K cycles/32 ms

Detailed Pin Configuration

The pin configuration of IS42S16160G-7TLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. VSS

Functional Features

• High-speed data transfer
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Low-power standby mode
• Error correction code (ECC) support (optional)

Advantages and Disadvantages

Advantages

• Fast and efficient data storage and retrieval
• Large storage capacity
• Low power consumption
• Compact package size
• Reliable performance

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited compatibility with older systems

Working Principles

IS42S16160G-7TLI operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, which are organized into rows and columns. The data is accessed by sending row and column addresses along with control signals to select the desired memory location. The stored data can be read or written in synchronization with an external clock signal.

Detailed Application Field Plans

IS42S16160G-7TLI finds applications in various fields, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Networking equipment 5. Embedded systems 6. Industrial automation 7. Medical devices 8. Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to IS42S16160G-7TLI include: 1. MT48LC16M16A2P-75: Micron Technology Inc. 2. K4S561632H-UC75: Samsung Electronics Co., Ltd. 3. HYB39S256160FE-7: Infineon Technologies AG 4. M12L16161A-7T: Alliance Memory Inc. 5. AS4C16M16SA-7TCN: Alliance Semiconductor Corporation

These alternative models offer similar specifications and functionality to IS42S16160G-7TLI and can be considered as suitable replacements depending on specific requirements.

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