10AT115N3F40E2SGES

Basic Information Overview

• Category: Electronic Component
• Use: Power Amplifier
• Characteristics: High Efficiency, Low Distortion
• Package: SMD (Surface Mount Device)
• Essence: Amplification of Electrical Signals
• Packaging/Quantity: Tape and Reel, 1000 units per reel

Specifications

• Model Number: 10AT115N3F40E2SGES
• Type: NPN Transistor
• Maximum Collector Current: 10A
• Maximum Collector-Emitter Voltage: 115V
• Maximum Power Dissipation: 40W
• Gain Bandwidth Product: 2 GHz
• Package Type: SOT-223
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The 10AT115N3F40E2SGES transistor has the following pin configuration:

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High power amplification capability
• Low distortion for accurate signal reproduction
• Wide operating temperature range for versatile applications
• Small package size for space-constrained designs
• Surface mount device for easy integration into PCBs

Advantages and Disadvantages

Advantages: - High efficiency amplification - Low distortion output - Wide operating temperature range - Compact package size

Disadvantages: - Limited maximum collector current - Limited maximum power dissipation

Working Principles

The 10AT115N3F40E2SGES is an NPN transistor that operates as a power amplifier. When a small electrical signal is applied to the base terminal, it controls the flow of current between the collector and emitter terminals. This amplifies the input signal, allowing it to drive larger loads such as speakers or antennas.

Detailed Application Field Plans

The 10AT115N3F40E2SGES transistor is commonly used in the following applications:

1. Audio Amplifiers: Provides high power amplification for audio signals in home theater systems, car audio systems, and professional audio equipment.
2. RF Amplifiers: Boosts radio frequency signals in wireless communication systems, radar systems, and satellite communication equipment.
3. Power Supplies: Used as a switching element in power supply circuits to regulate voltage and current levels.

Detailed and Complete Alternative Models

1. 2N3904: A widely used NPN transistor with similar characteristics and package type.
2. BC547: Another popular NPN transistor suitable for low-power amplification applications.
3. MJE3055T: A high-power NPN transistor capable of handling larger currents and voltages.

(Note: The above alternative models are provided for reference purposes and may have different specifications and pin configurations.)

This entry provides an overview of the 10AT115N3F40E2SGES transistor, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.