IR2108S

Product Overview

Category: Integrated Circuit (IC)

Use: The IR2108S is a high voltage, high-speed power MOSFET and IGBT driver. It is specifically designed to drive power MOSFETs and IGBTs with high efficiency and reliability.

Characteristics: - High voltage capability - High speed switching - Low power consumption - Compact package size - Wide operating temperature range

Package: The IR2108S is available in a compact 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence: The essence of the IR2108S lies in its ability to provide efficient and reliable driving of power MOSFETs and IGBTs, enabling high-performance power electronics applications.

Packaging/Quantity: The IR2108S is typically sold in reels or tubes containing a quantity of 250 units per package.

Specifications

• Supply Voltage: 10V - 20V
• Output Current: 200mA
• Operating Temperature Range: -40°C to +125°C
• Input Logic Levels: CMOS/TTL compatible
• Propagation Delay Time: 120ns (typical)
• Rise/Fall Time: 35ns (typical)
• Output Resistance: 1.5Ω (typical)

Pin Configuration

The IR2108S features the following pin configuration:

1. Vb: Bootstrap supply voltage
2. HO: High-side gate driver output
3. LO: Low-side gate driver output
4. Vs: High-side floating supply return
5. COM: Ground reference for low-side driver
6. VB: High-side floating supply voltage
7. SD: Shutdown input
8. VS: High-side floating supply return

Functional Features

• High voltage capability allows driving of power MOSFETs and IGBTs in various applications.
• High-speed switching enables efficient power conversion and reduces switching losses.
• Low power consumption ensures energy efficiency and minimizes heat dissipation.
• Compact package size facilitates space-saving designs.
• Wide operating temperature range allows reliable operation in harsh environments.

Advantages

• Efficient and reliable driving of power MOSFETs and IGBTs.
• High-speed switching for improved power conversion efficiency.
• Low power consumption for energy-efficient operation.
• Compact package size for space-saving designs.
• Wide operating temperature range for versatile application possibilities.

Disadvantages

• Limited output current capability (200mA).
• Requires external bootstrap capacitor for high-side gate drive.
• Not suitable for applications requiring higher output resistance.

Working Principles

The IR2108S operates by receiving input logic signals and generating corresponding gate drive signals to control the switching of power MOSFETs and IGBTs. It utilizes a bootstrap circuit to provide the necessary voltage levels for driving the high-side gate.

Application Field Plans

The IR2108S is widely used in various power electronics applications, including: - Motor drives - Switch-mode power supplies - Inverters - Uninterruptible power supplies (UPS) - Solar inverters - Electric vehicle charging systems

Alternative Models

Other alternative models that can be considered as replacements or substitutes for the IR2108S include: - IR2104 - IR2110 - IRS21844 - TC4427

These alternative models offer similar functionality and characteristics, providing flexibility in design choices.

In conclusion, the IR2108S is a high voltage, high-speed power MOSFET and IGBT driver with excellent performance and reliability. Its compact package, wide operating temperature range, and efficient driving capabilities make it a popular choice for various power electronics applications.