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IPB70N04S406ATMA1
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IPB70N04S406ATMA1

Product Overview

Category

The IPB70N04S406ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified
  • RoHS compliant

Package

The IPB70N04S406ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 70A
  • RDS(ON) (Max) @ VGS = 10V: 4.0mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC
  • Avalanche Energy (EAS): 160mJ

Detailed Pin Configuration

The IPB70N04S406ATMA1 follows the standard pin configuration for a power MOSFET: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High current-carrying capability
  • Low conduction losses
  • Fast switching characteristics
  • Suitable for high-frequency applications
  • Enhanced ruggedness and reliability

Advantages and Disadvantages

Advantages

  • Efficient power handling
  • Reduced heat dissipation
  • Improved system performance
  • Suitable for demanding applications
  • Enhanced thermal management

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Requires careful consideration of drive circuitry

Working Principles

The IPB70N04S406ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IPB70N04S406ATMA1 finds extensive use in the following application fields: - Switch-mode power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the IPB70N04S406ATMA1 include: - IPB60R190C6 - Infineon Technologies - FDP8878 - Fairchild Semiconductor - IRF1405 - International Rectifier - STP80NF55-06 - STMicroelectronics

In conclusion, the IPB70N04S406ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power management and control applications, making it an essential component in modern electronic systems.

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Wymień 10 typowych pytań i odpowiedzi związanych z zastosowaniem IPB70N04S406ATMA1 w rozwiązaniach technicznych

  1. What is the maximum drain-source voltage of IPB70N04S406ATMA1?

    • The maximum drain-source voltage of IPB70N04S406ATMA1 is 40V.

  2. What is the continuous drain current rating of IPB70N04S406ATMA1?

    • The continuous drain current rating of IPB70N04S406ATMA1 is 70A.

  3. What is the on-resistance of IPB70N04S406ATMA1?

    • The on-resistance of IPB70N04S406ATMA1 is typically 4.0mΩ at Vgs=10V.

  4. Can IPB70N04S406ATMA1 be used in automotive applications?

    • Yes, IPB70N04S406ATMA1 is designed for use in automotive applications.

  5. What is the operating temperature range of IPB70N04S406ATMA1?

    • The operating temperature range of IPB70N04S406ATMA1 is -55°C to 175°C.

  6. Does IPB70N04S406ATMA1 have built-in ESD protection?

    • Yes, IPB70N04S406ATMA1 features built-in ESD protection.

  7. Is IPB70N04S406ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB70N04S406ATMA1 is suitable for high-frequency switching applications.

  8. What package type does IPB70N04S406ATMA1 come in?

    • IPB70N04S406ATMA1 is available in a TO-263-7 package.

  9. What gate-source voltage is required to fully enhance IPB70N04S406ATMA1?

    • A gate-source voltage of 10V is typically required to fully enhance IPB70N04S406ATMA1.

  10. Is IPB70N04S406ATMA1 RoHS compliant?

    • Yes, IPB70N04S406ATMA1 is RoHS compliant.